MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
ZXMN6A09GTA


N-Channel 60 V 5.4A (Ta) 2W (Ta) Surface Mount SOT-223-3
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Diodes Incorporated 2468
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AUD 0.9227
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7.5 A60 V40 mOhmsN - Channel 1 V- 55 C+ 150 C3.9 WSmd/SmtSOT - 223 - 4Cut TapeSi1 Channel10 V24.2 nCEnhancement  
DMN4800LSSL-13


MOSFET MOSFET BVDSS: 25V-30 SO-8,2.5K
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Diodes Incorporated 2467
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AUD 0.2594
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8 A30 V14 mOhmsN - Channel  - 55 C+ 150 C1.46 WSmd/SmtSO - 8ReelSi1 Channel20 V8.7 nCEnhancement  
SIS472DN-T1-GE3


Vishay Semiconductors MOSFET 30 Volts 20 Amps 28 Watts
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Vishay 2467
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AUD 0.3593
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20 A30 V8.9 mOhmsN - Channel  - 55 C+ 150 C28 WSmd/SmtPOWERPAK - 1212 - 8ReelSi 20 V   Trenchfet, Powerpak
DMN2029USD-13


MOSFET 20V Dual N-Ch ENH 20V 25mOhm 4.5V 5.8A
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Diodes Incorporated 2466
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AUD 0.2167
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5.8 A20 V25 mOhms , 25 mOhmsN - Channel 1.5 V- 55 C+ 150 C1.2 WSmd/SmtSO - 8Cut TapeSi2 Channel8 V10.4 nCEnhancement  
IPT60R055CFD7XTMA1


N-Channel 600V 44A (Tc) 236W (Tc) Surface Mount PG-HSOF-8-1
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Infineon 2466
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AUD 4.5478
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          8 - POWERSFNTape And ReelMosfet (Metal Oxide)      
IPA70R450P7SXKSA1


MOSFET CONSUMER
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Infineon 2464
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AUD 0.6304
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10 A700 V370 mOhmsN - Channel 2.5 V- 40 C+ 150 C22.7 WThrough HoleTO - 220FP - 3TubeSi1 Channel16 V13.1 nCEnhancement  
AO3404


30V 5.8A 25mΩ@10V,5.8A 1.4W 2.5V@250uA null SOT-23 MOSFETs ROHS
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Yongyutai Electronics 2463
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AUD 0.0171
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SIRS5700DP-T1-RE3


MOSFETs N-CH 150V Vds 20Vgs 144A Rds .0062
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Vishay 2457
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AUD 2.791
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144 A150 V5.6 mOhmsN - Channel 4 V- 55 C+ 150 C278 WSMD/SMTSO - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V73 nCEnhancement  
IRFB4227PBFXKMA1


MOSFETs Y
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Infineon 2423
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AUD 1.3019
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           TubeSi      
TPM60V2PS3-2


SOT-23 MOSFETs ROHS
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TECH PUBLIC 2420
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AUD 0.1406
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