MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
JANTXV2N6794


Trans MOSFET N-CH 500V 1.5A 3-Pin TO-39
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Infineon 0
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AUD 70.785

Multiples of: 1

           Bulk    enhancement  
IXBF10N300C


MOSFET
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IXYS 0
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AUD 70.8364

Multiples of: 1

            BiMOSFETâ„¢      
IVST12050SA1L


SOT-227 MOSFETs ROHS
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InventChip 0
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AUD 70.8763

Multiples of: 1

                   
APT12057B2FLLG


MOSFET FG, FREDFET, 1200V, 0.57_OHM, TO-247 T-MAX, RoHS
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Microchip 0
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AUD 70.9692

Multiples of: 1

            POWER MOS 7®      
DE275X2-501N16A


Trans RF MOSFET N-CH 500V 16A 8-Pin SMD
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IXYS 0
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AUD 71.208

Multiples of: 1

                   
JANTXV2N6764


Trans MOSFET N-CH 100V 38A 3-Pin(2+Tab) TO-204AE
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AUD 71.2972

Multiples of: 50

                   
DAMI560N100


Module; single transistor; 100V; 445A; SOT227B; screw; screw; 890W
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DACO SEMICONDUCTOR 0
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AUD 71.5045

Multiples of: 1

                   
MSC017SMA120S


MOSFET MOSFET SIC 1200 V 17 mOhm TO-268
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Microchip 0
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AUD 71.7351

Multiples of: 1

100 A1.2 kV17.6 mOhmsN - Channel 2.7 V- 55 C+ 175 C357 WSMD/SMTTO - 268 - 3 SiC1 Channel- 10 V , + 23 V249 nCEnhancement  
MSC017SMA120B4


MOSFET MOSFET SIC 1200 V 17 mOhm TO-247-4
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Microchip 0
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AUD 72.2201

Multiples of: 1

113 A1.2 kV17.6 mOhmsN - Channel 2.7 V- 55 C+ 175 C455 WThrough HoleTO - 247 - 4 SiC1 Channel- 10 V , + 23 V249 nCEnhancement  
VQ1001P-E3


MOSFET Quad NCH 30V 1R
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Vishay 0
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AUD 72.27

Multiples of: 1

830 mA30 V1 Ohmsn - channel  - 55 C+ 150 C2 Wthrough holeCDIP - 14 si4 channel20 V enhancement  
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