MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BUK7907-55AIE,127


MOSFET TRENCHPLUS MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

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AUD 55.9756
Multiples of: 1

140 A55 V7 mOhmsn - channel  - 55 C+ 175 C272 Wthrough holeTO - 220 - 5Tube 1 channel20 V enhancement  
BUK7E4R6-60E,127


MOSFET BUK7E4R6-60E/I2PAK/STANDARD MA
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AUD 55.9756
Multiples of: 1

           Tubesi      
BUK7226-75A,118


MOSFET TAPE13 PWR-MOS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

NXP 0
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AUD 55.9756
Multiples of: 1

45 A75 V26 mOhmsn - channel  - 55 C+ 175 C114 Wsmd/smtTO - 252 - 3Reelsi1 channel20 V enhancement  
BUK6211-75C,118


MOSFET N-CHAN 75V 74A
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AUD 55.9756
Multiples of: 1

74 A75 V11 mOhmsn - channel  - 55 C+ 175 C158 Wsmd/smtTO - 252 - 3Reelsi1 channel20 V    
BUK6212-40C,118


MOSFET N-CHAN 40V 50A
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AUD 55.9756
Multiples of: 1

50 A40 V12 mOhmsn - channel  - 55 C+ 175 C80 Wsmd/smtTO - 252 - 3Reelsi1 channel20 V    
BUK662R4-40C,118


MOSFET N-CHANNEL TRENCHMOS FET
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NXP 0
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AUD 55.9756
Multiples of: 1

120 A40 V1.9 mOhmsn - channel     smd/smtSOT - 404 - 3Reelsi1 channel     
BUK6C3R3-75C,118


MOSFET N-CH 75V D2PAK
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AUD 55.9756
Multiples of: 4800

           -       
BSL308PE L6327


MOSFET P-CH 30V 2A 6TSOP
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AUD 55.9756
Multiples of: 1

           -       
BSS123 L6433


MOSFET N-CH 100V 170MA SOT-23
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AUD 55.9756
Multiples of: 1

           -       
IXFM40N30


MOSFET 40 Amps 300V 0.088 Rds
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AUD 55.9756
Multiples of: 1

40 A300 V88 mOhmsn - channel  - 55 C+ 150 C300 Wthrough holeTO - 3 - 3Tubesi1 channel20 V enhancement hiperfet
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