MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IV2Q12017T4Z


TO-247-4 MOSFETs ROHS
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AUD 54.0141
Multiples of: 1

                   
IXTH2N300P3HV


Discrete Semiconductor Modules Disc Mosfet N-CH Std-Polar3 TO-247AD
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AUD 54.0493
Multiples of: 1

2 A3000 V21 OhmsN - Channel 3 V- 55 C+ 150 C520 WThrough HoleTO - 247 - 3Tube  20 V   Polar3
IXFX26N100P


MOSFET 26 Amps 1000V
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AUD 54.3692
Multiples of: 300

20 A1 kV390 mOhmsN - Channel  - 55 C+ 150 C780 WThrough HoleTO - 247 - 3TubeSi1 Channel30 V Enhancement Hiperfet
IXFZ520N075T2


MOSFET TrenchT2 HiperFETs Gate TrenchT2 MOSFET
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IXYS 0
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AUD 54.3781
Multiples of: 1

465 A75 V1.3 mOhmsn - channel 4 V- 55 C+ 175 C600 Wsmd/smtDE - 475 - 6Tubesi 20 V545 nCenhancement hiperfet
2SJ555(E)


Trans MOSFET P-CH 60V 60A 3-Pin(3+Tab) TO-3P
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Renesas 0
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AUD 54.4841
Multiples of: 1

60 A  P    125 WThrough Hole      Enhancement  
IRFAG50


Trans MOSFET N-CH 1KV 5.6A 3-Pin(2+Tab) TO-204AA
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Infineon 0
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AUD 54.5117
Multiples of: 1

5.6 A1 kV2.3 OhmsN - Channel  - 55 C+ 150 C150 WThrough HoleTO - 204AA - 2 Si1 Channel20 V Enhancement  
IXTR120P20T


MOSFET TrenchP Power MOSFET
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IXYS 0
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AUD 54.5354
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90 A200 V32 mOhmsp - channel     through holeTO - 247 - 3Tubesi      
APT12080JVFR


MOSFET FG, FREDFET, 1200V, 0.80_OHM, SOT-227
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Microchip 0
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AUD 54.7737
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            POWER MOS 5®      
C2M0080170P


MOSFET DMOSFET 1.7kV 80mOHMS 4PLUS
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AUD 54.789
Multiples of: 1

40 A1700 V80 mOhmsN - Channel 2 V- 55 C+ 150 C277 WThrough HoleTO - 247 - 4TubeSic1 Channel20 v , - 5 V120 nCEnhancement  
IXFB100N50Q3


MOSFET Q3Class HiPerFET Pwr MOSFET 500V/100A
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AUD 54.8569
Multiples of: 1

100 A500 V49 mOhmsn - channel    1.56 kWthrough holePLUS - 264 - 3Tubesi1 channel30 V255 nC  hiperfet
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First...55715572557355745575...

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