MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
PGA26E19BA


MOSFET 600VDC, 10A, GaN GIT Eng Prototype Sample
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Panasonic 0
6 to 16 Weeks Calender.png

AUD 31.1731
Multiples of: 1

13 A600 V190 mOhmsn - channel 4 V- 55 C+ 150 C69 Wsmd/smtDFN - 8 si1 channel- 10 V120 nCenhancement x - gan
NVH4L027N65S3F


MOSFET SF3 FRFET AUTO 27MOHM TO-247-4L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 0
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AUD 31.2308
Multiples of: 1

                   
PD57018S-E


MOSFET 8 BITS MICROCONTR
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 0
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AUD 31.2822
Multiples of: 1

2.5 A65 V760 mOhmsn - channel  - 65 C+ 165 C31.7 Wsmd/smtSOIC - 10Tubesi1 channel20 V enhancement  
JANTX2N6798


2N6798 Series 200 V 420 mOhm Through Hole N-Channel Mosfet - TO-205AF
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
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AUD 31.3433
Multiples of: 1

                   
JANTX2N6766


Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-3
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
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AUD 31.4137
Multiples of: 1

30 A  n    150 Wthrough hole      enhancement  
IV2Q06025L1


TOLL MOSFETs ROHS
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InventChip 0
6 to 16 Weeks Calender.png

AUD 31.4531
Multiples of: 1

                   
APT20M18B2VFRG


MOSFET FG, FREDFET, 200V, TO-247 T-MAX, RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microchip 0
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AUD 31.5086
Multiples of: 1

            POWER MOS 5®      
IXFK48N50


MOSFET DIODE Id48 BVdass500
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IXYS 0
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AUD 31.5522
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48 A500 V100 mOhmsn - channel  - 55 C+ 150 C500 Wthrough holeTO - 264 - 3Tubesi1 channel20 V enhancement hyperfet
IXFT220N20X3HV


MOSFET DiscMSFT NChUltrJnctn X3Class TO-268AA
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IXYS 0
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AUD 31.5538
Multiples of: 1

           Tube      Hiperfet
APT38F80L


MOSFET FG, FREDFET, 800V, TO-264
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microchip 0
6 to 16 Weeks Calender.png

AUD 31.5577
Multiples of: 1

41 A800 V240 mOhmsN - Channel 4 V- 55 C+ 150 C1.04 kWThrough HoleTO - 264 - 3ReelSi +/- 30 V260 nCEnhancement  
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