MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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Image  Information Image Stock Code(▲▼)Description
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IXFX21N100Q


MOSFET 21 Amps 1000V 0.5 Rds
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS 0
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AUD 23.9385
Multiples of: 1

21 A1 kV500 mOhmsn - channel20 V - 55 C+ 150 C500 Wthrough holePLUS - 247 - 3Tube    enhancement  
IXFT170N25X3HV


MOSFET 250V/170A Ultra Junc tion X3-Class MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS 0
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AUD 24.0767
Multiples of: 1

170 A250 V6.1 mOhmsN - Channel 2.5 V- 55 C+ 150 C960 WSmd/SmtTO - 268HV - 3 Si1 Channel20 V190 nCEnhancement Hiperfet
APT10M19SVRG


MOSFET FG, MOSFET, 100V, 0.019_OHM, D3, TO-268, RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microchip 0
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AUD 24.08
Multiples of: 1

            POWER MOS 5®      
APT6029BFLLG


MOSFET FG, FREDFET, 600V, 0.29_OHM, TO-247, RoHS
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Microchip 0
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AUD 24.1877
Multiples of: 1

            POWER MOS 7®      
APT56F50B2


MOSFET FG, FREDFET, 500V, TO-247 T-MAX
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Microchip 0
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AUD 24.1877
Multiples of: 1

56 A500 V100 mOhmsN - Channel 4 V- 55 C+ 150 C780 WThrough HoleTMAX - 3TubeSi +/- 30 V220 nCEnhancement  
IXFK32N100X


MOSFET 1000V 32A TO-264 Power MOSFET
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IXYS 0
6 to 16 Weeks Calender.png

AUD 24.2301
Multiples of: 1

32 A1000 V220 mOhmsN - Channel 3.5 V- 55 C+ 150 C890 WThrough HoleTO - 264 - 3TubeSi1 Channel30 V130 nCEnhancement Hiperfet
STW30NM60N


MOSFET N-channel 600V, 25A Power II Mdmesh
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STMicroelectronics 0
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AUD 24.2595
Multiples of: 1

25 A600 V130 mOhmsn - channel  - 55 C+ 150 C190 Wthrough holeTO - 247 - 3Tube 1 channel30 V enhancement  
GS66508B-E01-MR


MOSFET No longer available. Order GS66508B-MR
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Gan Systems 0
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AUD 24.2743
Multiples of: 1

30 A650 V50 mOhmsn - channel 1.7 V- 55 C+ 150 C smd/smtGANPX - 4Reelgan1 channel7 V5.8 nCenhancement  
APT34F60B


MOSFET FG, FREDFET, 600V, TO-247
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microchip 0
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AUD 24.2954
Multiples of: 1

36 A600 V190 mOhmsN - Channel 4 V- 55 C+ 150 C624 WThrough HoleTO - 247 - 3TubeSi +/- 30 V165 nCEnhancement  
GS66508T-TR


MOSFET 650V, 30A, GaN E-mode, GaNPX package, Top-side cooled
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Gan Systems 0
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AUD 24.3015
Multiples of: 1

30 A650 V63 mOhmsN - Channel 2.6 V- 55 C+ 150 C SMD/SMT Reel , Cut TapeGaN1 Channel- 10 V , + 7 V6.1 nCEnhancement GaNPX
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