MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Image  Information Image Stock Code(▲▼)Description
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPZA60R024P7XKSA1


MOSFET HIGH POWER_NEW
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
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AUD 22.707

Multiples of: 240

           TubeSi      
KN3M40120K


TO-247-4 SiC MOSFETs ROHS
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KNSCHA 0
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AUD 22.7072

Multiples of: 1

                   
IMW120R060M1HXKSA1


MOSFET SIC DISCRETE
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AUD 22.9385

Multiples of: 1

36 A1200 V78 mOhmsN - Channel 5.7 V- 55 C+ 150 C150 WThrough HoleTO - 247 - 3TubeSic1 Channel- 7 v , 23 V31 nCEnhancement  
APT34M60B


MOSFET FG, MOSFET, 600V, TO-247
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microchip 0
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AUD 22.96

Multiples of: 1

            POWER MOS 8®      
BLP10H610AZ


Trans RF MOSFET N-CH 104V 12-Pin HVSON EP
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Ampleon 0
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AUD 22.99

Multiples of: 60

                   
JANTX2N6794


MOSFET
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Infineon 0
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AUD 22.999

Multiples of: 50

1.5 A500 V3.1 Ohmsn - channel  - 55 C+ 125 C20 Wsmd/smtTO - 205AF - 3 si1 channel20 V enhancement  
IXFL100N50P


MOSFET tbd Amps 500V 0.06 Ohms Rds
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IXYS 0
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AUD 23.0185

Multiples of: 1

70 A500 V52 mOhmsN - Channel 5 V- 55 C+ 150 C625 WThrough HoleTO - 264 - 3TubeSi1 Channel- 30 V , 30 V240 nCEnhancement HiPerFET
IXFK52N100X


MOSFET 52A 1000V POWER MOSFET
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IXYS 0
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AUD 23.0211

Multiples of: 1

52 A1 kV125 mOhmsN - Channel 3.5 V- 55 C+ 150 C1.25 kWThrough HoleTO - 264 - 3TubeSi1 Channel10 V245 nCEnhancement Hiperfet
UF3C120080K4S


MOSFET 1200V/80mOhm, SiC, FAST CASCODE, G3, TO-247-4L, REDUCED Rth
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

UnitedSiC 0
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AUD 23.0795

Multiples of: 1

33 A1200 V100 mOhmsN - Channel 4 V- 55 C+ 175 C254.2 WThrough HoleTO - 247 - 4TubeSic1 Channel25 V51 nCEnhancement  
UJ3C120080K3S


MOSFET 1200V/80mOhm, SiC, CASCODE, G3, TO-247-3L, REDUCED Rth
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

UnitedSiC 0
6 to 16 Weeks Calender.png

AUD 23.0795

Multiples of: 1

33 A1.2 kV100 mOhmsN - Channel 4 V- 55 C+ 175 C254.2 WThrough HoleTO - 247 - 3TubeSic1 Channel- 25 v , 25 V51 nCEnhancement  
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