MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IXFH1605


IXFH1605
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS 0
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AUD 16.5617
Multiples of: 1

                   
IXFK170N20T


MOSFET 170A 200V
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IXYS 0
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AUD 16.61
Multiples of: 1

170 A200 V11 mOhmsn - channel 5 V- 55 C+ 175 C1.15 kWthrough holeTO - 264 - 3Tubesi1 channel20 V265 nCenhancement hiperfet
IXFR36N60P


N-Channel 600 V 20A (Tc) 208W (Tc) Through Hole ISOPLUS247™
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IXYS 0
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AUD 16.61
Multiples of: 300

20 A600 V200 mOhmsn - channel  - 55 C+ 150 C208 Wthrough holeTO - 247 - 3Tubesi1 channel30 V enhancement hiperfet
IXFT30N50P


MOSFET 500V 30A
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IXYS 0
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AUD 16.6356
Multiples of: 1

30 A500 V200 mOhmsn - channel  - 55 C+ 150 C460 Wsmd/smtTO - 268 - 3Tubesi1 channel30 V enhancement hiperfet
IXFX200N10P


MOSFET 200 Amps 100V 0.0075 Rds
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IXYS 0
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AUD 16.6356
Multiples of: 1

200 A100 V7.5 mOhmsn - channel  - 55 C+ 175 C830 Wthrough holeTO - 247 - 3Tubesi1 channel20 V enhancement hiperfet
NTE2951


Transistor: N-MOSFET; 600V; 43A; TO247
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NTE 0
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AUD 16.6771
Multiples of: 1

                   
IXFH50N60X


MOSFET DiscMSFT NCh UltrJnctn XClass TO-247AD
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IXYS 0
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AUD 16.6889
Multiples of: 1

50 A600 V73 mOhmsN - Channel 2.5 V- 55 C+ 150 C660 WThrough HoleTO - 247 - 3 Si1 Channel30 V116 nCEnhancement Hiperfet
STWA63N65DM2


MOSFET N-channel 650 V, 0.042 Ohm typ 60 A MDmesh DM2 Power MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 0
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AUD 16.7138
Multiples of: 1

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IXGH30N60A


MOSFET 60 Amps 600V 2.6 Rds
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IXYS 0
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AUD 16.7515
Multiples of: 1

60 A600 V2.6 Ohmsn - channel    200 Wthrough holeTO - 247 - 3Tube       
FMW30N60S1HF


MOSFET, N-CH, 600V, 30A, TO-247-3
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AUD 16.752
Multiples of: 1

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