MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDWS9510L-F085


MOSFET PT8P 40V LL PQFN56
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ON Semiconductor 4
Ships to you
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AUD 30.0612
Multiples of: 1

50 A40 V13.5 mOhmsP - Channel 3 V- 55 C+ 175 C75 WSmd/SmtDFN - 8Cut TapeSi1 Channel16 V37 nCEnhancement  
SIHG64N65E-GE3


MOSFET 650V Vds 30V Vgs TO-247AC
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Vishay 0
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AUD 13.68
Multiples of: 1

64 A650 V47 mOhmsN - Channel 4 V- 55 C+ 150 C520 WThrough HoleTO - 247AC - 3 Si1 Channel30 V239 nCEnhancement  
IXFH54N65X3


MOSFET DISCRETE MOSFET 54A 650V X3 TO
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IXYS 0
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AUD 13.7538
Multiples of: 1

54 A650 V59 OhmsN - Channel 5.2 V- 55 C+ 150 C625 WThrough Hole TubeSi1 Channel- 20 V , + 20 V49 nCEnhancement  
APT17F80S


MOSFET FG, FREDFET, 800V, TO-268
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Microchip 0
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AUD 13.7687
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            POWER MOS 8®      
IXFT88N30P


MOSFET POLAR HIPERFET WITH REDUCED RDS 300V 88A
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IXYS 0
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AUD 13.8
Multiples of: 1

88 A300 V40 mOhmsn - channel 5 V- 55 C+ 150 C600 Wsmd/smtTO - 268 - 3Tubesi 20 V180 nCenhancement hiperfet
APT5014LVRG


MOSFET FG, MOSFET, 500V, TO-264, RoHS
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Microchip 0
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AUD 13.8
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         Through HoleTO - 247 - 3TubeSi      
TK20A60U(Q,M)


N-Channel 600 V 20A (Ta) 45W (Tc) Through Hole TO-220SIS
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Toshiba 0
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AUD 13.8009
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20 A600 V190 mOhmsn - channel  - 55 C+ 150 C45 Wsmd/smtSC - 62 - 3Traysi1 channel30 V enhancement  
NTHLD040N65S3HF


N-Channel 650 V 65A (Tc) 446W (Tc) Through Hole TO-247-3
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ON Semiconductor 0
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AUD 13.8247
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65 A650 V32 mOhmsN - Channel 3 V- 55 C+ 150 C446 WThrough HoleTO - 247 - 3TubeSi1 Channel10 V159 nCEnhancement Superfet Iii
NTE2923


Transistor: N-MOSFET; 500V; 8.8A; TO247
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NTE 0
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AUD 13.8269
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IXTH20P50P


MOSFET -20.0 Amps -500V 0.450 Rds
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IXYS 0
6 to 16 Weeks Calender.png

AUD 13.8443
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20 A500 V450 mOhmsP - Channel 2 V- 55 C+ 150 C460 WThrough HoleTO - 247 - 3TubeSi1 Channel10 V103 nCEnhancement  
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First...54815482548354845485...

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