MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STW65N80K5


MOSFET N-channel 800 V, 0.07 O typ., 46 A MDmesh K5 Power MOSFET in a TO-247 package
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STMicroelectronics 1
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AUD 20.9763
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46 A800 V80 mOhmsN - Channel 4 V- 55 C+ 150 C446 WThrough HoleTO - 247 - 3 -1 Channel+/- 30 V92 nCEnhancement  
IXFK120N30T


MOSFET 120A 300V
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IXYS 0
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AUD 10.1343
Multiples of: 1

120 A300 V24 mOhmsn - channel 5 V- 55 C+ 150 C960 Wthrough holeTO - 264 - 3Tubesi1 channel20 V265 nCenhancement hiperfet
STWA67N60M6


MOSFET N-channel 600 V, 45 mOhm typ 52 A MDmesh M6 Power MOSFET
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STMicroelectronics 0
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AUD 10.1354
Multiples of: 1

            MDmesh M6      
FDG6332C-F085


Trans MOSFET N/P-CH 20V 0.7A/0.6A 6-Pin SC-70 T/R
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ON Semiconductor 0
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AUD 10.1404
Multiples of: 1

700 mA20 V300 mOhms , 420 mOhmsN - Channel, P - Channel  - 55 C+ 150 C300 mWSmd/SmtSC - 70 - 6Cut TapeSi2 Channel12 V1.1 nC , 1.4 nCEnhancementAec - Q101Powertrench
STW62NM60N


MOSFET N-Ch 600V 0.049 Ohm 55A MDmesh II FET
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STMicroelectronics 0
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AUD 10.162
Multiples of: 1

3 A600 V48 mOhmsn - channel 4 V  350 Wthrough holeTO - 247Tubesi1 channel25 V130 nC   
IRFPS43N50KPBF


N-Channel 500 V 47A (Tc) 540W (Tc) Through Hole SUPER-247™ (TO-274AA)
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Vishay 0
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AUD 10.191
Multiples of: 25

   n - channel  - 55 C+ 150 C smd/smtTO - 247AATubesi      
708477-1


MOSFET N-Chan 500V 2.1 Amp
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TE Connectivity 0
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AUD 10.2
Multiples of: 1

2.1 A500 V3 Ohmsn - channel20 V2 v to 4 V- 55 C+ 150 C30 Wthrough holeTO - 220FP - 3Tube   24 nCenhancement  
IXFH40N30Q


MOSFET 300V 40A
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IXYS 0
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AUD 10.2
Multiples of: 30

40 A300 V80 mOhmsn - channel  - 55 C+ 150 C300 Wthrough holeTO - 247 - 3Tubesi1 channel20 V enhancement hyperfet
TK040N65Z,S1F


MOSFET Power MOSFET 57A 360W 650V
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Toshiba 0
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AUD 10.2099
Multiples of: 1

57 A650 V40 mOhmsN - Channel 3 V- 55 C+ 150 C360 WThrough HoleTO - 247 - 3 Si1 Channel30 V105 nCEnhancement  
STW160N75F3


MOSFET 75V 3.5m 120A N-Channel
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STMicroelectronics 0
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AUD 10.2143
Multiples of: 600

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