MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BUZ901


MOSFET, N, TO-3
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TT Electronics 0
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AUD 9.45
Multiples of: 1

   n channel               
GAN3R2-100CBEAZ


GaN FETs MOS DISCRETES
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Nexperia 0
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AUD 9.4506
Multiples of: 1

                   
IPP110N20N3GXK


Trans MOSFET N-CH 200V 88A 3-Pin(3+Tab) TO-220
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Infineon 0
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AUD 9.4622
Multiples of: 250

                   
NTE2907


Transistor: N-MOSFET; 600V; 10A; TO220FP
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NTE 0
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AUD 9.4629
Multiples of: 1

                   
H5N3011P-E


Trans MOSFET N-CH 300V 88A 3-Pin(3+Tab) TO-3P Magazine
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Renesas 0
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AUD 9.4641
Multiples of: 1

                   
IXTA140P05T


MOSFET -140 Amps -50V 0.008 Rds
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IXYS 0
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AUD 9.4714
Multiples of: 1

140 A50 V9 mOhmsP - Channel     Smd/SmtTO - 263 - 3TubeSi      
IXFR24N50


MOSFET 22 Amps 500V 0.23 Rds
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IXYS 0
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AUD 9.4746
Multiples of: 1

24 A500 V230 mOhmsN - Channel  - 55 C+ 150 C250 WThrough HoleTO - 247 - 3TubeSi1 Channel20 V Enhancement Hyperfet
IMW120R140M1HXKSA1


N-Channel 1200 V 19A (Tc) 94W (Tc) Through Hole PG-TO247-3-41
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Infineon 0
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AUD 9.5091
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19 A1200 V182 mOhmsN - Channel 3.5 V- 55 C+ 175 C94 WThrough HoleTO - 247 - 3TubeSic1 Channel18 V13 nCEnhancement  
IXFH58N20


N-Channel 200 V 58A (Tc) 300W (Tc) Through Hole TO-247AD (IXFH)
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IXYS 0
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AUD 9.5178
Multiples of: 1

58 A200 V40 mOhmsn - channel20 V - 55 C+ 150 C300 Wthrough holeTO - 247 - 3Tube    enhancement  
IPB60R099CPXT


Trans MOSFET N-CH 650V 31A 3-Pin(2+Tab) TO-263
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Infineon 0
6 to 16 Weeks Calender.png

AUD 9.5196
Multiples of: 1000

                   
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