MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI7478DP-T1-E3


N-Channel 60 V 15A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
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Vishay 2
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AUD 6.0283
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   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK SO - 8Reel       
IPA60R125CP


N-Channel 600 V 25A (Tc) 35W (Tc) Through Hole PG-TO220-3-31
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Infineon 0
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AUD 6.0192
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25 A600 V110 mOhmsN - Channel 2.5 V- 55 C+ 150 C35 WThrough HoleTO - 220 - 3 FPTubeSi1 Channel20 V70 nCEnhancement Coolmos
IXFQ34N50P3


MOSFET Polar3 HiPerFET Power MOSFET
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IXYS 0
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AUD 6.0211
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34 A500 V180 mOhmsN - Channel     Through HoleTO - 3P - 3TubeSi     Hiperfet
IRFS3207HR


Trans MOSFET N-CH 75V 180A 3-Pin(2+Tab) D2PAK
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Infineon 0
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AUD 6.0248
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IXTA3N100D2HV


MOSFET DiscMosfet N-CH Depl Mode-D2 TO-263D2
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IXYS 0
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AUD 6.0308
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3 A1 kV6 OhmsN - Channel 4.5 V- 55 C+ 150 C125 WSMD/SMTTO - 263HV - 3TubeSi1 Channel- 20 V , 20 V37.5 nCDepletion  
TK16G60W,RVQ


Toshiba MOSFET DTMOSIV 600V 190mOhm 15.8A 130W 1350pF
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Toshiba 0
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AUD 6.0329
Multiples of: 1000

15.8 A600 V190 mOhmsn - channel 2.7 v to 3.7 V- 55 C+ 150 C130 Wsmd/smtD2PAK - 3Reelsi1 channel30 V38 nC  dtmosiv
STB180N55F3


MOSFET Lo Vltg fast Swtch PNP Pwr transistor
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STMicroelectronics 0
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AUD 6.0342
Multiples of: 1000

120 A55 V3.5 mOhmsn - channel20 V - 55 C+ 175 C330 Wsmd/smtD2PAK - 3Reel    enhancement  
IXTA76N25T


MOSFET 76 Amps 250V 39 Rds
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IXYS 0
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AUD 6.0343
Multiples of: 300

76 A250 V42 mOhmsn - channel 5 V- 55 C+ 150 C460 Wsmd/smtTO - 263 - 3Tubesi1 channel20 V92 nCenhancement trench
AUIRFS3107-7TRL


Infineon IR MOSFET 75V 260A 2.6 mOhm Automotive MOSFET
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Infineon 0
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AUD 6.0343
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260 A75 V2.5 mOhmsN - Channel   + 175 C370 WSmd/SmtTO - 252 - 3ReelSi1 Channel 160 nC Aec - Q101 
FDPF2D3N10C


MOSFET PTNG N-CH 100V/120V
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ON Semiconductor 0
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AUD 6.0504
Multiples of: 50

222 A100 V2.1 mOhmsN - Channel 2 V- 55 C+ 175 C45 WThrough HoleTO - 220F - 3 Si1 Channel20 V152 nCEnhancement  
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