MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPP120N20NFD


Infineon Technologies MOSFET N-Ch 200V 84A TO220-3
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Infineon 492
Ships to you
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AUD 4.5512
Multiples of: 1

84 A200 V10.6 mOhmsN - Channel 3 V- 55 C+ 175 C300 WThrough HoleTO - 220 - 3Tube-1 Channel+/- 20 V65 nCEnhancement Optimos
IXTP32N65X


MOSFET 650V/9A Power MOSFET
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IXYS 0
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AUD 5.8849
Multiples of: 1

32 A650 V135 mOhmsn - channel 3 V- 55 C+ 150 C500 Wthrough holeTO - 220 - 3Tubesi1 channel30 V54 nCenhancement hiperfet
SIHA30N60AEL-GE3


MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
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Vishay 0
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AUD 5.8883
Multiples of: 1

28 A600 V120 mOhmsN - Channel 2 V- 55 C+ 150 C39 WThrough HoleTO - 220FP - 3 Si1 Channel30 V120 nCEnhancement  
IRF100P218XKMA1


MOSFET TRENCH_MOSFETS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
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AUD 5.8897
Multiples of: 1

462 A100 V1.28 OhmsN - Channel 2.2 V- 55 C+ 175 C556 WThrough HoleTO - 247AC - 3TubeSi1 Channel10 V370 nCEnhancement  
IXTH36N50P


MOSFET 36.0 Amps 500 V 0.17 Ohm Rds
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IXYS 0
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AUD 5.9
Multiples of: 30

36 A500 V170 mOhmsN - Channel 5 V- 55 C+ 150 C540 WThrough HoleTO - 247 - 3TubeSi1 Channel30 V85 nCEnhancement Polarhv
IRFP350LCPBF


N-Channel 400 V 16A (Tc) 190W (Tc) Through Hole TO-247AC
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Vishay 0
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AUD 5.9002
Multiples of: 1

   N - Channel  - 55 C+ 150 C Through HoleTO - 247ACTubeSi      
ALD810026SCL


MOSFET Quad MOSFET ARRAY Vt=2.60V
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Advanced Linear Devices 0
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AUD 5.9086
Multiples of: 1

100 pA10.6 V22 OhmsN - Channel2.2 V2.6 V0 C+ 70 C500 mWSmd/SmtSOIC - 16TubeSi4 Channel10.6 V Enhancement Sab
FDB0690N1507L


MOSFET 150V TO263 7L JEDEC GREEN EMC
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ON Semiconductor 0
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AUD 5.9094
Multiples of: 800

         Smd/SmtTO - 263 - 7Cut TapeSi      
IXFC110N10P


MOSFET 55 Amps 100V 0.015 Rds
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IXYS 0
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AUD 5.9125
Multiples of: 1

60 A100 V17 mOhmsn - channel20 V5 V- 55 C+ 175 C120 Wthrough holeTO - 220 - 3Tube   110 nCenhancement polarhv, hiperfet
BUK655R0-75C


Trans MOSFET N-CH 75V 120A Automotive 3-Pin(3+Tab) TO-220AB
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NXP 0
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AUD 5.9135
Multiples of: 1

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