MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Image  Information Image Stock Code(▲▼)Description
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SIJH5100E-T1-GE3


MOSFETs N-Channel 100 V (D-S) 175C MOSFET PowerPAK 8x8L BWL, 1.89 mohm a. 10V 2.14 mohm a. 7.5V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 0
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AUD 5.1692

Multiples of: 1

277 A100 V1.89 mOhmsN - Channel 4 V- 55 C+ 175 C333 WSMD/SMTPOWERPAK - 4Reel , Cut TapeSi1 Channel- 20 V , + 20 V85 nCEnhancement  
MSJP20N65-BP


MOSFET N-Ch 650Vds 30Vgs 20A 60A 151W
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Micro Commercial Components (MCC) 0
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AUD 5.1693

Multiples of: 1

          TO - 220 - 3Box-      
FDBL86561-F085


MOSFET NMOS TOLL 60V 1.1 MOHM
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 0
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AUD 5.1694

Multiples of: 2000

                   
STB26NM60N


STMicroelectronics MOSFET POWER MOSFET N-CH 600V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 0
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AUD 5.172

Multiples of: 1

20 A600 V165 mOhmsN - Channel 3 V- 55 C+ 150 C140 WSMD/SMTD2PAK - 3 (TO - 263 - 3)Reel , Cut TapeSi1 Channel- 30 V , 30 V60 nCEnhancement MDmesh
TJ150F06M3L(T4L,Q)


Transistor: P-MOSFET; unipolar; -60V; -150A; 300W; TO220SM
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Toshiba 0
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AUD 5.1821

Multiples of: 1

                   
FDI025N06


MOSFET 60V N-Channel PowerTrench
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 0
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AUD 5.1888

Multiples of: 50

265 A60 V2.5 mOhmsn - channel20 V - 55 C+ 175 C395 Wthrough holeI2PAK - 3Tube    enhancement  
IXKC15N60C5


MOSFET 15 Amps 600V 0.165 Rds
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IXYS 0
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AUD 5.1908

Multiples of: 1

15 A600 V165 mOhmsn - channel20 V - 55 C+ 150 C114 Wsmd/smtTO - 220 - 3Tubesi1 channel20 V enhancement coolmos
IPW50R140CP


MOSFET COOL MOS PWR TRANS 550V 0.140 Ohms
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Infineon 0
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AUD 5.1923

Multiples of: 1

23 A500 V140 mOhmsn - channel  - 55 C+ 150 C192 Wthrough holeTO - 247Tubesi1 channel20 V enhancement coolmos
SIHG17N80E-GE3


MOSFET 800V Vds 30V Vgs TO-247AC
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 0
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AUD 5.1923

Multiples of: 1

15 A300 V250 mOhmsN - Channel 4 V- 55 C+ 150 C208 WThrough HoleTO - 247AC - 3TubeSi1 Channel30 V122 nCEnhancement  
IPI120N10S403AKSA1


MOSFET N-CHANNEL 100+
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Infineon 0
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AUD 5.1943

Multiples of: 1

   N - Channel     Through HoleTO - 262 - 3TubeSi1 Channel   Aec - Q101 
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