MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDMS86180


MOSFET 100V/20V N-Channel PTNG MOSFET
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ON Semiconductor 2
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AUD 5.3051
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151 A100 V2.4 mOhmsN - Channel 2 V- 55 C+ 150 C138 WSmd/SmtPOWER - 56 - 8Cut TapeSi1 Channel20 V84 nCEnhancement  
NVMFS5C404NWFAFT1G


ONSNVMFS5C404NWFAFT1G
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ON Semiconductor 1
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AUD 9.1563
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378 A40 V570 uOhmsN - Channel 2 V- 55 C+ 175 C200 w , 3.9 W  Cut TapeSi1 Channel10 V128 nCEnhancementAec - Q101 
NVMFS5C410NLAFT1G


40V 330A 0.65m@10V,50A 167W 2V@250uA 1PCSNChannel DFN-5(5.9x4.9) MOSFETs ROHS
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ON Semiconductor 0
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AUD 5.0455
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AUIRLS3036TRL


International Rectifier MOSFET 60V 270A 2.4 mOhm Auto Lgc Lvl MOSFET
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Infineon 0
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AUD 5.0466
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270 A60 V2.8 mOhmsn - channel   + 175 C380 Wsmd/smtD - PAK - 3Reelsi1 channel 91 nC aec - q101 
IRF7779L2TR1PBF


MOSFET 150V 67A 11mOhm 97nC Qg
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Infineon 0
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AUD 5.0514
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67 A150 V9 mOhmsn - channel20 V5 V + 175 C125 Wsmd/smtDirectfet - 15Reel   97 nC   
SIHK105N60EF-T1GE3


MOSFET EF SERIES PWR MOSFET
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Vishay 0
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AUD 5.0577
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 600 V N - Channel 5 V- 55 C+ 150 C SMD/SMTPOWERPAK 10 x 12Reel , Cut TapeSi1 Channel- 20 V , 20 V Enhancement  
ALD910026SAL


MOSFET Dual MOSFET ARRAY Vt=2.60V
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Advanced Linear Devices 0
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AUD 5.06
Multiples of: 50

100 pA10.6 V22 OhmsN - Channel2.2 V2.6 V0 C+ 70 C500 mWSmd/SmtSOIC - 8TubeSi2 Channel10.6 V Enhancement Sab
SPA20N60C3XK


Trans MOSFET N-CH 600V 20.7A 3-Pin(3+Tab) TO-220FP
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Infineon 0
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AUD 5.062
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STP26NM60ND


MOSFET N-CH 600V 0.145Ohm typ. 21A FDmesh II
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STMicroelectronics 0
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AUD 5.0628
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21 A600 V145 mOhmsn - channel25 V4 V  190 Wthrough holeTO - 220 - 3Tubesi1 channel25 V54.6 nC   
SQJQ184E-T1_GE3


MOSFETs Automotive N-Channel 80 V (D-S) 175C MOSFET , 1.4 mO 10V
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Vishay 0
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AUD 5.0855
Multiples of: 1

430 A80 V1.4 mOhmsN - Channel 3 V- 55 C+ 175 C600 WSMD/SMTPOWERPAK 8 x 8LReel , Cut TapeSi1 Channel- 20 V , + 20 V181 nC   
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