MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SIHK105N60E-T1-GE3


MOSFETs N-CHANNEL 600V
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AUD 4.4054

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           Reel , Cut TapeSi      
IXTP340N04T4


MOSFET 40V/340A TrenchT4 Power MOSFET
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IXYS 0
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AUD 4.4055

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340 A40 V1.9 mOhmsn - channel 2 V- 55 C+ 175 C480 Wthrough holeTO - 220 - 3Tubesi1 channel15 V256 nCenhancement hiperfet
STL33N60M2


STMicroelectronics MOSFET
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STMicroelectronics 0
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AUD 4.4057

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21.5 A600 V135 mOhmsn - channel+/- 25 V3 V- 55 C+ 150 C150 Wsmd/smtPowerflat - 5Cut Tapesi1 channel25 V4.7 nCenhancement mdmesh
IRLS4030PBF


Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; D2PAK
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AUD 4.4084

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            Hexfet®      
IPP120N04S302AKSA1


Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 120A; 300W
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AUD 4.409

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            Optimos T      
SIHK155N60E-T1-GE3


MOSFETs E Series Power MOSFET PowerPAK 10 x 12, 155 mohm a. 10V
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AUD 4.4123

Multiples of: 1

19 A600 V135 mOhmsN - Channel 5 V- 55 C+ 150 C156 WSMD/SMTPOWERPAK - 8Reel , Cut TapeSi1 Channel- 30 V , + 30 V24 nCEnhancement  
SIHB17N80E-GE3


N-Channel 800 V 15A (Tc) 208W (Tc) Surface Mount D²PAK (TO-263)
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AUD 4.4123

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15 A800 V290 mOhmsN - Channel 2 V- 55 C+ 150 C208 WSMD/SMTD2PAK - 3 (TO - 263 - 3) Si1 Channel- 30 V , 30 V122 nCEnhancement  
ASR65R046EFD


TOLL-8L MOSFETs ROHS
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ANHI 0
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AUD 4.4157

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IPT025N15NM6ATMA1


MOSFETs TRENCH >=100V
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AUD 4.4157

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263 A150 V2.5 mOhmsN - Channel 3.5 V- 55 C+ 175 C395 WSMD/SMTHSOF - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V105 nCEnhancement  
AOT290L


MOSFET N Trench 100V 18A 4.1V @ 250uA 3.5 mΩ @ 20A,10V TO-220 (TO-220-3) RoHS
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AUD 4.4159

Multiples of: 1

                   
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