MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SQM120P06-07L_GE3


MOSFET 60 V 120A 375 W AEC-Q101 Qualified
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Vishay 1910
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AUD 5.1508
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- 120 A- 60 V6.7 mOhmsP - Channel - 2 V- 55 C+ 175 C375 WSmd/SmtTO - 263 - 3Reel  20 V180 nC  Trenchfet
IAUTN06S5N008ATMA1


MOSFETs N
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Infineon 0
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AUD 4.1171
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           Reel , Cut TapeSi    AEC - Q101OptiMOS
IXTH460P2


MOSFET PolarP2 Power MOSFET
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IXYS 0
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AUD 4.1211
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24 A500 V270 mOhmsn - channel 4.5 V- 55 C+ 150 C480 Wthrough holeTO - 247 - 3Tubesi 30 V48 nCenhancement polarp2
PSMN1R5-30BLE


MOSFET, N-CH, 30V, 120A, D2PAK
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Nexperia 0
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AUD 4.1213
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   N Channel               
MS9N150H


1.5kV 9A 2.9@10V,4A 350W 5V@250A 1 N-Channel TO-247-3 MOSFETs ROHS
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MASPOWER 0
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AUD 4.122
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TSM80N1R2CP ROG


Transistor: N-MOSFET; unipolar; 800V; 3.4A; 110W; DPAK
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Taiwan Semiconductor 0
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AUD 4.1225
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SMP3003-DL-1E


MOSFET PCH 4V DRIVE SERIES
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ON Semiconductor 0
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AUD 4.1228
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- 100 A- 75 V8 mOhmsp - channel20 V - 55 C+ 150 C90 Wsmd/smt418 - AP - 4Reelsi1 channel- 4 V280 nCenhancement  
ALD1116PAL


MOSFET Dual N-Channel Pair
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Advanced Linear Devices 0
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AUD 4.1231
Multiples of: 50

4.8 mA12 V350 Ohms , 350 OhmsN - Channel 400 mV0 C+ 70 C500 mW (1/2 w)Through HolePDIP - 8TubeSi2 Channel10.6 V Enhancement  
TK16J60W,S1VQ


Toshiba MOSFET N-Ch 15.8A 130W FET 600V 1350pF 38nC
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Toshiba 0
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AUD 4.1231
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15.8 A600 V160 mOhmsn - channel 2.7 v to 3.7 V- 55 C+ 150 C130 Wthrough holeTO - 3P - 3 si1 channel30 V38 nCenhancement  
AUIRF2903Z


International Rectifier MOSFET AUTO 30V 1 N-CH HEXFET 2.4mOhms
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Infineon 0
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AUD 4.1254
Multiples of: 173

260 A30 V2.4 mOhmsN - Channel20 V   290 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V160 nC Aec - Q101 
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