MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPA60R120P7


Transistor: N-MOSFET; unipolar; 600V; 16A; 28W; TO220FP
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Infineon 29
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AUD 3.2034
Multiples of: 1

            Coolmos P7      
IPB009N03L G


MOSFET OptiMOS 3 PWR TRANS 30V 180A
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Infineon 0
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AUD 3.9615
Multiples of: 1

180 A30 V700 mOhmsn - channel 1 V- 55 C+ 175 C250 Wsmd/smtTO - 263Reelsi1 channel20 V227 nCenhancement optimos
IPB60R280C6


MOSFET N-Ch 600V 13.8A D2PAK-2 CoolMOS C6
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Infineon 0
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AUD 3.9616
Multiples of: 1

13.8 A600 V250 mOhmsn - channel 2.5 V- 55 C+ 150 C104 Wsmd/smtTO - 263 - 3Reelsi1 channel20 V43 nCenhancement coolmos
BSP135 H6906


Infineon Technologies MOSFET N-Ch 600V 20mA SOT-223-3
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AUD 3.9616
Multiples of: 1

120 mA600 V25 Ohmsn - channel 2.1 V- 55 C+ 150 C1.8 Wsmd/smtSOT - 223 - 4Reel-1 channel20 V4.9 nCdepletion  
STF33N60M6


MOSFET N-channel 600 V, 105 mOhm typ., 26 A MDmesh M6 Power MOSFET in a TO-220FP package
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STMicroelectronics 0
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AUD 3.9616
Multiples of: 1

25 A600 V125 mOhmsN - Channel 3.25 V- 55 C+ 150 C35 WThrough HoleTO - 220FP - 3TubeSi1 Channel25 V33.4 nCEnhancement Mdmesh
NDP7060


MOSFET TO-220 N-CH ENHANCE
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ON Semiconductor 0
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AUD 3.9651
Multiples of: 1

   n - channel  - 65 C+ 175 C through holeTO - 220 - 3Tube       
SPI16N50C3


Trans MOSFET N-CH 560V 16A 3-Pin(3+Tab) TO-262
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Infineon 0
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AUD 3.9659
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                enhancement  
AUIRF1324S


Trans MOSFET N-CH 24V 340A Automotive 3-Pin(2+Tab) D2PAK Tube
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Infineon 0
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AUD 3.9669
Multiples of: 174

340 A24 V1.5 mOhmsN - Channel  - 55 C 300 WSmd/SmtTO - 252 - 3Tube 1 Channel20 V160 nCEnhancement  
IXTA12N65X2


MOSFET DiscMSFT NChUltraJnctn X2Class TO-263D2
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IXYS 0
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AUD 3.9701
Multiples of: 1

12 A600 V300 mOhmsN - Channel 2.5 V- 55 C+ 150 C180 WSmd/SmtTO - 263 - 3 Si1 Channel30 V17.7 nCEnhancement Hiperfet
SIHP22N60AE-GE3


MOSFET 600V Vds 30V Vgs TO-220AB
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Vishay 0
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AUD 3.9739
Multiples of: 1000

20 A600 V156 mOhmsN - Channel 4 V- 55 C+ 150 C179 WThrough HoleTO - 220AB - 3TubeSi1 Channel30 V48 nCEnhancement  
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