MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPW60R160C6


N-Channel 600 V 23.8A (Tc) 176W (Tc) Through Hole PG-TO247-3-41
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 32
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AUD 5.0991
Multiples of: 1

23.8 A600 V140 mOhmsN - Channel 2.5 V- 55 C+ 150 C176 WThrough HolePG - TO 247 - 3TubeSi1 Channel20 V75 nCEnhancement Coolmos
AUIRFSL6535


MOSFET N-CHANNEL 100+
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Infineon 0
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AUD 3.153
Multiples of: 1

19 A300 V145 mOhmsn - channel 3 V- 55 C+ 175 C210 Wthrough holeTO - 262 - 3Tubesi1 channel+/- 20 V57 nCenhancementaec - q101 
VBP1206N


200V 50m@10V 1PCSNChannel TO-247 MOSFETs ROHS
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VBsemi Elec 0
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AUD 3.1536
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IPP50R199CP


N-Channel 500 V 17A (Tc) 139W (Tc) Through Hole PG-TO220-3-1
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Infineon 0
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AUD 3.1538
Multiples of: 1

17 A500 V199 mOhmsN - Channel20 V - 55 C+ 150 C139 WThrough HoleTO - 220 - 3Tube    Enhancement Coolmos
TPW1500CNH,L1Q


MOSFET Pb-F POWER MOSFET TRANSISTOR DSOP-ADV PD=142W F=1MHZ
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Toshiba 0
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AUD 3.1543
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50 A150 V15.4 mOhmsN - Channel 2 V- 55 C+ 150 C142 WSMD/SMTDSOP - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V22 nCEnhancement U - MOSVIII - H
STB13N80K5


MOSFET N-CH 800V 0.37Ohm 12A SuperMESH 5
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STMicroelectronics 0
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AUD 3.1566
Multiples of: 9

12 A800 V450 mOhmsn - channel30 V4 V- 55 C+ 150 C190 Wsmd/smtD2PAK - 2Reelsi1 channel30 V29 nC  mdmesh
SIHB150N60E-GE3


MOSFETs E Series Power MOSFET D2PAK (TO-263), 158 mohm a. 10V
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Vishay 0
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AUD 3.1569
Multiples of: 1

22 A600 V158 mOhmsN - Channel 5 V- 55 C+ 150 C179 WSMD/SMTD2PAK - 3 (TO - 263 - 3)Reel , Cut TapeSi1 Channel- 30 V , + 30 V24 nCEnhancement  
IRFSL3107PBF


Transistor: N-MOSFET; unipolar; 75V; 230A; 370W; TO262
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Infineon 0
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AUD 3.1577
Multiples of: 1

230 A75 V2.5 mOhmsN - Channel20 V   370 WThrough HoleI2PAK - 3Tube   160 nC   
SIHB22N60AE-GE3


MOSFET 600V Vds 30V Vgs D2PAK TO-263
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Vishay 0
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AUD 3.1579
Multiples of: 1

20 A650 V156 mOhmsN - Channel 4 V- 55 C+ 150 C179 WSmd/SmtTO - 263 - 3TubeSi1 Channel30 V48 nCEnhancement  
STB28NM50N


MOSFET N-Ch 500V 0.135 21A MDmesh II
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STMicroelectronics 0
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AUD 3.1604
Multiples of: 1000

21 A500 V158 mOhmsn - channel 4 V + 150 C150 Wsmd/smtTO - 263Reelsi1 channel25 V50 nC  mdmesh
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First...51865187518851895190...

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