MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Image  Information Image Stock Code(▲▼)Description
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FQP20N60C-VB


650V 1PCSNChannel TO-220 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

VBsemi Elec 48
Ships to you
between Wed. 30 Sep to Mon. 05 Oct
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AUD 3.9995

Multiples of: 1

                   
STB31N65M5


MOSFET N-Ch 650V 0.124 Ohm 22 A MDmesh V
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STMicroelectronics 0
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AUD 2.9068

Multiples of: 1

13.9 A650 V148 mOhmsn - channel    150 Wsmd/smtD2PAKReelsi     mdmesh
NVMFWS3D6N10MCLT1G


MOSFET PTNG 100V LL NCH SO-8FL WETTABLE FLANK FOR AUTOMOTIVE MARKET
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ON Semiconductor 0
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AUD 2.9071

Multiples of: 1

132 A100 V3.6 mOhmsN - Channel 3 V- 55 C+ 175 C139 WSMD/SMTSO - 8FL - 4Reel , Cut TapeSi1 Channel- 20 V , + 20 V29 nCEnhancement  
IPB021N06N3 G


MOSFET OptiMOS3 PWRTrnsistr N-CH
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Infineon 0
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AUD 2.9073

Multiples of: 1

120 A60 V2.1 mOhmsn - channel 3 V- 55 C+ 175 C250 Wsmd/smtTO - 263 - 3Reelsi1 channel20 V206 nCenhancement  
IPB100N06S205ATMA4


Transistor: N-MOSFET; unipolar; 55V; 100A; 300W; PG-TO263-3
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Infineon 0
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AUD 2.9077

Multiples of: 1

            Optimos      
AOT66613L


Transistor: N-MOSFET; AlphaSGT™; unipolar; 60V; 44.5A; 8.3W
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Alpha & Omega 0
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AUD 2.9077

Multiples of: 1

            AlphaSGT      
AOB2918L-VB


TO-263 MOSFETs ROHS
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VBsemi Elec 0
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AUD 2.9089

Multiples of: 1

                   
VP0550N3-G-P013


Microchip Technology MOSFET N-CH Enhancmnt Mode MOSFET
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Microchip 0
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AUD 2.9104

Multiples of: 2000

- 54 mA- 500 V85 Ohmsp - channel  - 55 C+ 150 C1 Wthrough holeTO - 92 - 3Reel 1 channel20 V enhancement  
R6004CNDTL


N-Channel 600 V 4A (Ta) 40W (Tc) Surface Mount CPT3
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ROHM 0
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AUD 2.9105

Multiples of: 1

4 A600 V1.8 Ohmsn - channel     smd/smtTO - 252 - 3Reelsi 10 V    
SQM120N04-1M7L-GE3


MOSFET 40V 120A 375W NCh Automotive
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Vishay 0
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AUD 2.9123

Multiples of: 1

   n - channel  - 55 C+ 175 C smd/smtTO - 263Reelsi    aec - q101trenchfet
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