MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRF60DM206


MOSFET 60V, 130A, DirectFET 2.9mOhm, 133nC Og
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Infineon 1
Ships to you
between Wed. 30 Sep to Mon. 05 Oct
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AUD 4.7433

Multiples of: 1

130 A60 V2.2 mOhmsN - Channel 3 V- 55 C+ 150 C96 WSmd/SmtDirectfet - MECut TapeSi1 Channel20 V133 nC  Strongirfet
TK17A65W5,S5X


MOSFET TO-220SIS PD=45W 1MHz PWR MOSFET TRNS
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Toshiba 0
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AUD 2.8731

Multiples of: 1

17.3 A650 V230 mOhmsN - Channel 4.5 V- 55 C+ 150 C45 WThrough HoleTO - 220SIS - 3TubeSi1 Channel30 V50 nCEnhancement Dtmosiv
AUIRFB4610


International Rectifier MOSFET AUTO 100V 1 N-CH HEXFET 14mOhms
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
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AUD 2.8737

Multiples of: 1

73 A100 V14 mOhmsN - Channel  - 55 C 190 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V90 nCEnhancementAec - Q101 
XK1R9F10QB,LXGQ


MOSFET 375W 1MHz Automotive; AEC-Q101
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Toshiba 0
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AUD 2.8737

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           Cut Tape       
IPP90R800C3XKSA2


MOSFET LOW POWER_LEGACY
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Infineon 0
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AUD 2.875

Multiples of: 1

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TPS1101DG4


Trans MOSFET P-CH 15V 2.3A 8-Pin SOIC Tube
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Texas Instruments 0
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AUD 2.8754

Multiples of: 75

           Rail/Tube    enhancement  
VBE18R11S


800V 11A 380mΩ@10V 4V 1PCSNChannel TO-252 MOSFETs ROHS
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VBsemi Elec 0
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AUD 2.8764

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AOTF29S50-VB


500V 24A 120mΩ@10V 4.5V 1PCSNChannel TO-220F MOSFETs ROHS
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VBsemi Elec 0
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AUD 2.8771

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STW34NB20


MOSFET N-Ch 200 Volt 34 Amp
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STMicroelectronics 0
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AUD 2.8786

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34 A200 V75 mOhmsn - channel30 V - 65 C+ 150 C180 Wthrough holeTO - 247 - 3Tube    enhancement  
SQ4840EY-T1-GE3


MOSFET,N CH,W DIODE,40V,20.7A,SO8
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Vishay 0
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AUD 2.8794

Multiples of: 2500

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