MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NCE65T180T


650V 21A 150mO@10V,10.5A 188W N Channel TO-247-3 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

NCE Power 217
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AUD 2.6707
Multiples of: 1

                   
IAUC100N10S5N040


MOSFETs MOSFET_(75V 120V(
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Infineon 28
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AUD 2.6798
Multiples of: 1

                   
SIHP180N60E-GE3


MOSFET 600V Vds 30V Vgs TO-220AB
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 0
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AUD 2.6651
Multiples of: 1

19 A600 V180 mOhmsN - Channel 3 V- 55 C+ 150 C156 WThrough HoleTO - 220AB - 3 Si1 Channel30 V22 nCEnhancement  
IRF6616TR1PBF


Transistor: N-MOSFET; unipolar; 40V; 19A; 89W; DirectFET
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Infineon 0
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AUD 2.6682
Multiples of: 1000

            Hexfet®      
IPW65R190CFD7AXKSA1


N-Channel 650V 14A (Tc) 77W (Tc) Through Hole PG-TO247-3
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Infineon 0
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AUD 2.6684
Multiples of: 1

          TO - 247 - 3TubeMosfet (Metal Oxide)      
STH10N80K5-2AG


MOSFET Automotive-grade N-channel 800V 0.60 Ohm 8A MDmesh K5 Power MOSFET
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STMicroelectronics 0
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AUD 2.6684
Multiples of: 1

           Cut Tape       
IPP06CN10L G


MOSFET OptiMOS 2 PWR-TRANS N-CH 100V 100A
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Infineon 0
6 to 16 Weeks Calender.png

AUD 2.67
Multiples of: 250

100 A100 V6.2 mOhmsN - Channel  - 55 C+ 175 C214 WThrough HoleTO - 220TubeSi1 Channel20 V Enhancement  
PSMN013-100BS.118


Transistor: N-MOSFET; unipolar; 100V; 68A; 170W; D2PAK
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Nexperia 0
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AUD 2.6708
Multiples of: 1

                   
NTP6410ANG


MOSFET NFET TO220 100V 76A 13MOH
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ON Semiconductor 0
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AUD 2.6714
Multiples of: 1

76 A100 V11 mOhmsN - Channel 4 V- 55 C+ 175 C188 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V120 nC   
IQEH42NE2LM7ZCGSCATMA1


MOSFETs OptiMOS 7 Power Transistor, 25 V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
6 to 16 Weeks Calender.png

AUD 2.6714
Multiples of: 1

460 A25 V N - Channel 1.7 V- 55 C+ 175 C150 WSMD/SMTPG - WHTFN - 9 Si1 Channel12 V29 nCEnhancement  
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