MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Image  Information Image Stock Code(▲▼)Description
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTD5865NLT4G


MOSFET Single N-CH 60V 40A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 1112
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AUD 2.2445
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46 A60 V16 mOhmsN - Channel 1 V- 55 C+ 175 C71 WSmd/SmtTO - 252 - 4Cut TapeSi1 Channel10 V29 nCEnhancement  
NCE65T180D


MOSFET N Trench 650V 21A (Tc) 4V @ 250uA 180 mO @ 10.5A,10V TO-263-2 RoHS
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NCE Power 1019
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AUD 2.2842
Multiples of: 1

                   
AOD4454


150V 94mΩ@10A,10V 4.6V@250uA null TO-252 MOSFETs ROHS
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Alpha & Omega 1
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AUD 2.2871
Multiples of: 1

                   
FQB55N10


MOSFET QF 100V 26MOHM D2PAK
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ON Semiconductor 0
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AUD 2.2838
Multiples of: 1

   N Channel               
FDA20N50F


N-Channel 500 V 22A (Tc) 388W (Tc) Through Hole TO-3PN
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ON Semiconductor 0
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AUD 2.2844
Multiples of: 1

22 A500 V260 mOhmsN - Channel  - 55 C+ 150 C388 WThrough HoleTO - 3PNTubeSi1 Channel30 V Enhancement Unifet
STP33N60M2


MOSFET N-CH 600V 0.108Ohm typ. 26A MDmesh II
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STMicroelectronics 0
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AUD 2.2851
Multiples of: 1000

26 A600 V108 mOhmsn - channel25 V3 V- 55 C+ 150 C190 Wthrough holeTO - 220 - 3Tubesi1 channel25 V45.5 nC  mdmesh
IRFBC30PBF-BE3


MOSFET 600V N-CH
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Vishay 0
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AUD 2.2857
Multiples of: 1

3.6 A600 V2.2 OhmsN - Channel 4 V- 55 C+ 150 C74 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 20 V , + 20 V31 nCEnhancement  
STB15N65M5


MOSFET N-Ch 650V 0.308 Ohm 11A Mdmesh V
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STMicroelectronics 0
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AUD 2.2857
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11 A650 V340 mOhmsN - Channel    85 WThrough HoleD2PAKReelSi1 Channel    Mdmesh
2SJ528-L(E)


Trans MOSFET P-CH 60V 7A 3-Pin(3+Tab) DPAK(L)-(2) Box
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Renesas 0
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AUD 2.2858
Multiples of: 1

7 A  p    20 Wthrough hole Box    enhancement  
IPI90R500C3XKSA1


Transistor: N-MOSFET; unipolar; 900V; 6.8A; 156W; PG-TO262-3
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Infineon 0
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AUD 2.2878
Multiples of: 50

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