MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TK9J90E,S1E


Toshiba MOSFET PLN MOS 900V 1300m (VGS=10V) TO-3PN
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Toshiba 1674
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AUD 2.1164
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9 A900 V1 OhmsN - Channel30 V4 V- 55 C+ 150 C250 WThrough HoleTO - 3P - 3ReelSi1 Channel10 V46 nCEnhancement  
FCPF260N65FL1


MOSFET Power MOSFET, N-Channel, SuperFET II, FRFET , 650 V, 15 A, 260 mO, TO-220F
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ON Semiconductor 0
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AUD 2.0099
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15 A650 V260 mOhmsn - channel 5 V- 55 C+ 150 C36 Wthrough holeTO - 220 - 3Tubesi1 channel20 v , 30 V46 nC  superfet ii frfet
RJK0365DPA-00#J0


Trans MOSFET N-CH 30V 30A 8-Pin WPAK T/R
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Renesas 0
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AUD 2.01
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AGM65N20AT


200V 75A 338W 17m@10V,40A 4.3V@250uA 1PCSNChannel TO-247 MOSFETs ROHS
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AGM-Semi 0
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AUD 2.0109
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FCPF190N60_F152


MOSFET 600V, 20.2A, 199mOhm SuperFET II MOSFET
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ON Semiconductor 0
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AUD 2.0114
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20.2 A600 V199 mOhmsN - Channel30 V3.5 V- 55 C+ 150 C39 WThrough HoleTO - 220 - 3 Si1 Channel30 V57 nCEnhancement  
R6009ENJTL


MOSFET 10V Drive Nch MOSFET
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ROHM 0
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AUD 2.0114
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9 A600 V500 mOhmsN - Channel 2 V- 55 C+ 150 C94 WSmd/SmtTO - 263 - 3ReelSi1 Channel+/- 30 V23 nCEnhancement  
FQPF6N70


N-CH/700V/3.5A/1.5OHM
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ON Semiconductor 0
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AUD 2.0121
Multiples of: 349

                   
R6011KNJTL


MOSFET Nch 600V 11A Si MOSFET
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ROHM 0
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AUD 2.0123
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11 A600 V340 mOhmsN - Channel 3 V- 55 C+ 150 C124 WSmd/SmtTO - 263 - 3Cut TapeSi1 Channel20 V22 nCEnhancement  
DMTH6004SCT


MOSFET MOSFET BVDSS:
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Diodes Incorporated 0
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AUD 2.0123
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         Through HoleTO - 220 - 3TubeSi      
IPW60R180P7XKSA1


Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; PG-TO247-3
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Infineon 0
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AUD 2.0138
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            Coolmos P7      
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