MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TN2540N8-G


Transistor: N-MOSFET; unipolar; 400V; 1A; 1.6W; SOT89
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microchip 1
Ships to you
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AUD 4.8619
Multiples of: 1

260 mA400 V12 OhmsN - Channel 600 mV- 55 C+ 150 C1.6 WSmd/SmtSOT - 89 (TO - 243AA)ReelSi1 Channel10 V Enhancement  
SQM50034E_GE3


MOSFET Nch 60V Vds 20V Vgs TO-263
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 0
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AUD 1.9371
Multiples of: 1

100 A60 V3.9 mOhmsN - Channel 2.5 V- 55 C+ 175 C150 WSmd/SmtTO - 263 - 3Cut TapeSi1 Channel20 V90 nCEnhancement Trenchfet
SQM100N02-3M5L_GE3


MOSFET N Ch 20Vds 20Vgs AEC-Q101 Qualified
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 0
6 to 16 Weeks Calender.png

AUD 1.9371
Multiples of: 800

100 A20 V2 mOhmsN - Channel 1.5 V- 55 C+ 175 C150 WSmd/SmtTO - 263 - 3Cut TapeSi1 Channel20 V110 nCEnhancementAec - Q101Trenchfet
IRFBF30PBF-BE3


N-Channel 900V 3.6A (Tc) 125W (Tc) Through Hole TO-220AB
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Vishay 0
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AUD 1.8543
Multiples of: 1

3.6 A900 V3.7 OhmsN - Channel 4 V- 55 C+ 150 C125 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 20 V , + 20 V78 nCEnhancement  
TPH5200FNH,L1Q


N-Channel 250 V 26A (Tc) 78W (Tc) Surface Mount 8-SOP Advance (5x5)
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Toshiba 0
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AUD 1.9384
Multiples of: 5000

26 A250 V44 mOhmsn - channel 2 V- 55 C+ 150 C78 Wsmd/smtSOP - 8Reelsi1 channel20 V22 nCenhancement  
IRFB9N65APBF


N-Channel 650 V 8.5A (Tc) 167W (Tc) Through Hole TO-220AB
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Vishay 0
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AUD 1.9385
Multiples of: 1

         Through HoleTO - 220 - 3TubeSi      
SLW20N50C


500V 20A 210mO@10V,10A 280W N Channel TO-3P-3 MOSFETs ROHS
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Maplesemi 0
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AUD 1.9387
Multiples of: 1

                   
SUD45P03-10-E3


MOSFET RECOMMENDED ALT 781-SUD50P04-08-GE3
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Vishay 0
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AUD 1.9394
Multiples of: 1

           -       
FCPF165N65S3L1


MOSFET SuperFET3 650V 165 mOhm, TO220F PKG
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ON Semiconductor 0
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AUD 1.9397
Multiples of: 1

19 A650 V140 mOhmsN - Channel 2.5 V- 55 C+ 150 C35 WThrough HoleTO - 220F - 3 Si1 Channel30 V35 nCEnhancement  
IPB60R380C6ATMA1


MOSFET LOW POWER_LEGACY
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Infineon 0
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AUD 1.9398
Multiples of: 1000

   n - channel       Reel 1 channel    coolmos
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