MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Image  Information Image Stock Code(▲▼)Description
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
CSD18540Q5B


Texas Instruments MOSFET 60V, N-channel NexFET Pwr MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Texas Instruments 1406
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between Tue. 29 Sep to Fri. 02 Oct
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AUD 2.8473

Multiples of: 1

221 A60 V3.3 mOhmsN - Channel+/- 20 V1.5 V- 55 C+ 150 C195 WSmd/SmtVSON - CLIP - 8ReelSi1 Channel10 V41 nCEnhancement Nexfet
IRF6617TRPBF


N-Channel 30 V 14A (Ta), 55A (Tc) 2.1W (Ta), 42W (Tc) Surface Mount DIRECTFET™ ST
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Infineon 19
Ships to you
between Tue. 29 Sep to Fri. 02 Oct
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AUD 1.8327

Multiples of: 1

            hexfet®      
IRFP340PBF


N-Channel 400 V 11A (Tc) 150W (Tc) Through Hole TO-247AC
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Vishay 0
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AUD 1.8298

Multiples of: 1

         Through HoleTO - 247 - 3TubeSi      
STL225N6F7AG


MOSFET Automotive 60V N-Ch 12mOhm 120A F7 Power
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STMicroelectronics 0
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AUD 1.8316

Multiples of: 1

120 A60 V1.2 mOhmsN - Channel 2 V- 55 C+ 175 C188 WSmd/SmtPowerflat - 5X6 - 8Cut TapeSi1 Channel20 V98 nCEnhancementAec - Q101Stripfet
IRFB3307ZGPBF


MOSFET MOSFT 75V 120A 5.8mOhm 79nC
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Infineon 0
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AUD 1.8318

Multiples of: 10

84 A75 V4.6 mOhmsn - channel20 V   230 Wthrough holeTO - 220 - 3Tube   79 nC   
GT035N10T


100V 190A 2.85m@10V 4V 1PCSNChannel TO-220 MOSFETs ROHS
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GOFORD 0
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AUD 1.8326

Multiples of: 1

                   
IAUC100N10S5N040ATMA1


MOSFET MOSFET_(75V 120V(
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Infineon 0
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AUD 1.8328

Multiples of: 5000

100 A100 V5.6 mOhmsN - Channel 2.2 V- 55 C+ 175 C167 WSmd/SmtTDSON - 8Cut TapeSi1 Channel20 V78 nCEnhancement  
AUIRFN7107TR


International Rectifier MOSFET 75V Single N-Channel HEXFET
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Infineon 0
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AUD 1.8333

Multiples of: 1

14 A75 V8.5 mOhmsN - Channel20 V4 V- 55 C+ 175 C4.4 WSmd/SmtPQFN - 8ReelSi1 Channel20 V51 nCEnhancementAec - Q101 
IRFI4228PBF


MOSFET MOSFT 150V 34A 16mOhm 73nC
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Infineon 0
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AUD 1.8336

Multiples of: 1

34 A150 V12.2 mOhmsn - channel    46 Wthrough holeTO - 220 - 3 FPTubesi1 channel30 V73 nC   
SIHP6N80E-GE3


MOSFET 650V Vds 30V Vgs TO-247AD
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Vishay 0
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AUD 1.7568

Multiples of: 1

5.4 A800 V820 mOhmsN - Channel 4 V- 55 C+ 150 C78 WThrough HoleTO - 220AB - 3TubeSi1 Channel30 V44 nCEnhancement  
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