MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
CSD16570Q5B


Texas Instruments MOSFET 25-V N-channel NexFET Pwr MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Texas Instruments 35
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AUD 1.7625
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100 A25 V590 uOhmsN - Channel 1.1 V- 55 C+ 150 C195 WSmd/SmtVSON - CLIP - 8ReelSi1 Channel10 V192 nCEnhancement Nexfet
WML125N12LG2


Transistor: N-MOSFET; unipolar; TO220FP
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Wayon 0
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AUD 1.76
Multiples of: 1

                   
MCP70N15YA-BP


MOSFETs
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Micro Commercial Components (MCC) 0
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AUD 1.76
Multiples of: 1

70 A150 V21 mOhmsN - Channel 5 V- 55 C+ 175 C136 WThrough HoleTO - 220AB - 3BulkSi1 Channel- 20 V , + 20 V38 nCEnhancement  
IPP65R380C6


Infineon Technologies MOSFET N-Ch 700V 10.6A TO220-3 CoolMOS C6
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Infineon 0
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AUD 1.7628
Multiples of: 406

10.6 A700 V380 mOhmsn - channel  - 55 C+ 175 C83 Wthrough holeTO - 220 - 3Tubesi1 channel20 V39 nC  coolmos
STI21N65M5


MOSFET N-channel 650 V, 0.1 50 Ohm, 17 A MDmesh
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STMicroelectronics 0
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AUD 1.763
Multiples of: 1000

17 A650 V179 mOhmsn - channel  - 55 C+ 150 C125 Wthrough holeI2PAK - 3Tubesi1 channel25 V50 nCenhancement mdmesh
IRFR6215TR


IRFR6215TR HEXFET T/HOLE
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Infineon 0
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AUD 1.7632
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- 13 A- 150 V580 mOhmsp - channel20 V- 4 V- 55 C+ 175 C110 Wsmd/smtDPAK - 3Reel   66 nCenhancement  
AUIRF9540N


Transistor: P-MOSFET; unipolar; -100V; -23A; 140W; TO220AB
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Infineon 0
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AUD 1.7635
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            Hexfet®      
SIHF7N60E-GE3


MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
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Vishay 0
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AUD 1.7635
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7 A600 V600 mOhmsN - Channel 4 V- 55 C+ 150 C31 WThrough HoleTO - 220FP - 3Cut TapeSi1 Channel30 V20 nCEnhancement  
BSC010N04LSCATMA1


MOSFET DIFFERENTIATED MOSFETS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
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AUD 1.7637
Multiples of: 5000

100 A40 V1.05 mOhmsN - Channel 1.2 V- 55 C+ 150 C139 WSmd/SmtPG - TDSON - 8Cut TapeSi1 Channel20 V133 nCEnhancement  
IRF3704ZPBF


MOSFET MOSFT 20V 67A 7.9mOhm 8.7nC Qg
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Infineon 0
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AUD 1.7643
Multiples of: 1

67 A20 V11.1 mOhmsn - channel20 V   57 Wthrough holeTO - 220 - 3Tube   8.7 nC   
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