MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
Si7190ADP-T1-RE3


MOSFET 250V Vds 20V Vgs PowerPAK SO-8
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Vishay 0
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AUD 1.725
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14.4 A250 V102 mOhmsN - Channel 2 V- 55 C+ 150 C56.8 WSmd/SmtPOWERPAK - SO - 8Cut TapeSi1 Channel20 V22.4 nCEnhancement  
SIHP6N65E-GE3


Vishay Semiconductors MOSFET 650V 600mOhm10V 7A N-Ch E-SRS
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Vishay 0
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AUD 1.725
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7 A650 V600 mOhmsN - Channel 4 V- 55 C+ 150 C78 WThrough HoleTO - 220 - 3BulkSi1 Channel30 V48 nCEnhancement E Series
HYG190P13NA1B


125V 72A 18m@10V,30A 230W 2.5V@250uA 1PCSPChannel TO-263-2 MOSFETs ROHS
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HuaYi 0
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AUD 1.7255
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SUM90N10-8M2P-GE3-VB


100V 140A 4mΩ@10V 1PCSNChannel TO-263 MOSFETs ROHS
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VBsemi Elec 0
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AUD 1.7256
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FQP32N20C-VB


200V 35A 58m@10V 1PCSNChannel TO-220 MOSFETs ROHS
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AUD 1.7256
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BSC077N12NS3 G-VB


100V 95A 6m@10V 1PCSNChannel DFN-8(5x6) MOSFETs ROHS
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VBsemi Elec 0
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AUD 1.7256
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FQB32N20C-VB


200V 40A 0.048@10V,20A 4.5W 4V@250uA TO-263 MOSFETs ROHS
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AUD 1.7256
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IRFS5620PBF-VB


200V 40A 0.048@10V,20A 4.5W 4V@250uA TO-263 MOSFETs ROHS
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AUD 1.7256
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2SK3607-01MR-VB


TO-220F MOSFETs ROHS
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VBsemi Elec 0
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AUD 1.7256
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IXTY02N50D_TRL


IXYS MOSFET 0.2 A 500V 30 Rds
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IXYS 0
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AUD 1.726
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200 mA500 V30 Ohmsn - channel -- 55 C+ 150 C1.1 Wsmd/smtTO - 252 - 3Reelsi1 channel20 V-depletion  
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