MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSC320N20NS3G


MOSFET N Channel 200V 36A(Tc) 4V @ 90uA 32mO @ 36A,10V PG-TDSON-8 RoHS
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Infineon 2238
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AUD 1.697
Multiples of: 1

                   
IRL8113SPBF


MOSFET MOSFT 30V 105A 6mOhm 23nC Qg log lvl
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Infineon 0
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AUD 1.6955
Multiples of: 50

105 A30 V7.1 mOhmsn - channel20 V   110 Wsmd/smtD - PAK - 3Tube   23 nC   
IPP052N06L3


MOSFET TO-220 RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

VBsemi Elec 0
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AUD 1.6964
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IPP076N15N5


MOSFET TRENCH >=100V
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Infineon 0
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AUD 1.6966
Multiples of: 1

                   
PXN4R7-30QLJ


MOSFET MOSFET DISCRETES
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Nexperia 0
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AUD 1.6968
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15 A30 V4.7 mOhmsN - Channel 2.5 V- 55 C+ 150 C1.8 WSMD/SMTMLPAK33 - 8Cut Tape , ReelSi1 Channel- 20 V , + 20 V14.7 nCEnhancement  
STI13NM60N


MOSFET N-Ch 600V 0.28Ohm 11A Mdmesh II I2PAK
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STMicroelectronics 0
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AUD 1.6971
Multiples of: 1

11 A600 V360 mOhmsn - channel  - 55 C+ 150 C90 Wthrough holeI2PAK - 3Tubesi1 channel25 V30 nCenhancement mdmesh
TSM70N1R4CH C5G


Transistor: N-MOSFET; unipolar; 700V; 2A; 38W; IPAK
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Taiwan Semiconductor 0
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AUD 1.6972
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IRFS4310ZPBF


Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; D2PAK
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Infineon 0
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AUD 1.6979
Multiples of: 9

127 A100 V4.8 mOhmsN - Channel    250 WSmd/SmtD2PAKTubeSi1 Channel20 V120 nC   
IRFH6200TR2PBF


MOSFET MOSFT 20V 100A 1.2mOhm 2.5V cpbl
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Infineon 0
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AUD 1.6993
Multiples of: 1

100 A20 V1.2 mOhmsn - channel12 V   250 Wsmd/smtPQFN - 8Reel   155 nC   
SI5504DC-T1-E3


MOSFET 30V 3.92.8A
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Vishay 0
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AUD 1.6993
Multiples of: 1

3.9 A30 V72 mOhms , 137 mOhmsn - channel, p - channel20 V - 55 C+ 150 C1.1 Wsmd/smtCHIP - FET - 8Reel    enhancement  
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