MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPP70N10S312AKSA1


Transistor: N-MOSFET; OptiMOS™ T; unipolar; 100V; 48A; 125W
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Infineon 0
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AUD 1.6607
Multiples of: 1

            optimos t      
IRF5210SPBF


MOSFET 1 P-CH -100V HEXFET 60mOhms 120nC
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Infineon 0
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AUD 1.6609
Multiples of: 1

- 40 A- 100 V60 mOhmsP - Channel  - 55 C+ 150 C3.8 WSmd/SmtTO - 252 - 3TubeSi1 Channel20 V120 nCEnhancement  
MCP87022T-U/MF


Trans MOSFET N-CH 25V 100A 8-Pin Power DFN EP T/R
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Microchip 0
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AUD 1.661
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   n - channel  - 55 C+ 150 C smd/smtPDFN - 8Reel       
SIR402DP-T1-GE3


MOSFET 30V 35A 36W 6.0mohm @ 10V
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Vishay 0
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AUD 1.661
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   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK SO - 8ReelSi     Trenchfet, Powerpak
FQB7P20TM_F085


MOSFET 200V P-Channel QFET
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ON Semiconductor 0
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AUD 1.6615
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- 7.3 A- 200 V690 mOhmsp - channel     smd/smtTO - 252 - 3Reelsi1 channel     
CEP140N10


MOSFET N Trench 100V 137A (Tc) 4V @ 250uA 7.5 mΩ @ 35A,10V TO-220 (TO-220-3) RoHS
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Chino-Excel 0
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AUD 1.6618
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CS20N50A8H


MOSFET N Trench 500V 20A (Tc) 4V @ 250uA 300 mΩ @ 10A,10V TO-220 (TO-220-3) RoHS
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Huajing 0
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AUD 1.6618
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IPA65R225C7


Infineon Technologies MOSFET HIGH POWER BEST IN CLASS
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Infineon 0
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AUD 1.6622
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7 A650 V199 mOhmsN - Channel 3 V- 55 C+ 150 C29 WThrough HoleTO - 220FP - 3TubeSi1 Channel20 V20 nCEnhancement Coolmos
STFH24N60M2


MOSFET N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in TO-220FP wide creepage package
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STMicroelectronics 0
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AUD 1.6625
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18 A600 V168 mOhmsN - Channel 2 V- 55 C+ 150 C30 WThrough HoleTO - 220FP - 3TubeSi1 Channel+/- 25 V29 nCEnhancement Mdmesh
IPD90P03P4-04


MOSFET P Chan Enhancement Mode 30V MOSFET
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Infineon 0
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AUD 1.6629
Multiples of: 1

90 A30 V4.5 mOhmsP - Channel 4 V- 55 C+ 175 C137 WSmd/SmtTO - 252ReelSi1 Channel10 V100 nCEnhancementAec - Q101Optimos
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