MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BUK762R6-40E,118


NXP Semiconductors MOSFET
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Nexperia 0
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AUD 1.6412

Multiples of: 4800

100 A40 V4.9 mOhmsn - channel20 V4.5 V- 55 C+ 175 C263 Wsmd/smtD2PAK - 3Reelsi1 channel20 V92 nC   
TK12A50W,S5X


MOSFET PWR MOSFET PD=35W F=1MHZ
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Toshiba 0
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AUD 1.6418

Multiples of: 1

11.5 A500 V300 mOhmsN - Channel 2.7 V- 55 C+ 150 C35 WThrough HoleTO - 220SIS - 3TubeSi1 Channel10 V25 nCEnhancement Dtmosiv
SPP80N03S2L-04


MOSFET N-KANAL POWER MOS
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Infineon 0
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AUD 1.6421

Multiples of: 1

80 A30 V3.6 mOhmsn - channel 1.2 V- 55 C+ 175 C188 Wthrough holeTO - 220 - 3Tubesi1 channel20 V105 nCenhancement  
BSC065N06LS5


MOSFET TRENCH 40<-<100V
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Infineon 0
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AUD 1.6426

Multiples of: 1

                   
SI7454DP-T1-GE3


MOSFET 100V 7.8A 4.8W 34mohm @ 10V
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Vishay 0
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AUD 1.6436

Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK SO - 8ReelSi     Trenchfet
IRFZ44VSTRLPBF


MOSFET D2PAK
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Infineon 0
6 to 16 Weeks Calender.png

AUD 1.6436

Multiples of: 1

         smd/smtD - PAK - 3        
SI7440DP-T1-E3


MOSFET 30V 21A 5.4W
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Vishay 0
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AUD 1.6436

Multiples of: 1

12 A30 V6.5 mOhmsn - channel20 V - 55 C+ 150 C1.9 Wsmd/smtSO - 8Reel    enhancement trenchfet
SI7840BDP-T1-E3


MOSFET 30V 14A 4.1W 8.5mohm 10V
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Vishay 0
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AUD 1.6436

Multiples of: 1

11 A30 V8.5 mOhmsn - channel20 V - 55 C+ 150 C1.8 Wsmd/smtSO - 8Reel    enhancement  
TK33S10N1L,LQ


MOSFET PWR MOSFET PD=125W F=1MHZ
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Toshiba 0
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AUD 1.6438

Multiples of: 1

33 A100 V9.7 mOhmsN - Channel 1.5 V- 55 C+ 175 C125 WSmd/SmtDPAK - 3Cut TapeSi1 Channel10 V33 nCEnhancement U - Mosviii - H
STF20NM65N-Y11


650V 15A 250mO@10V,7.5A 30W N Channel TO-220 MOSFETs ROHS
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STMicroelectronics 0
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AUD 1.6442

Multiples of: 1

                   
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