MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TPV65R170M


TO-3P-3 MOSFETs ROHS
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AUD 1.6343

Multiples of: 1

                   
RJ1G08CGNTLL


MOSFET NCH 40V 80A POWER
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ROHM 0
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AUD 1.6343

Multiples of: 1000

           Cut Tape       
IRFH5302TR2PBF


MOSFET MOSFT 30V 100A 2.1mOhm mx 29nC Qg
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Infineon 0
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AUD 1.6343

Multiples of: 400

32 A30 V2.1 mOhmsn - channel  - 55 C+ 150 C3.6 Wsmd/smtPQFN - 8Reelsi1 channel20 V29 nCenhancement  
SIHF7N60E-E3


MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
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Vishay 0
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AUD 1.6343

Multiples of: 1

7 A600 V600 mOhmsN - Channel 4 V- 55 C+ 150 C31 WThrough HoleTO - 220 - 3 FPTubeSi1 Channel30 V20 nCEnhancement  
IPP320N20N3 G


MOSFET N-Ch 200V 34A TO220-3 OptiMOS 3
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AUD 1.6343

Multiples of: 1

34 A200 V28 mOhmsN - Channel 2 V- 55 C+ 175 C136 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V29 nCEnhancement Optimos
AUIRFU1010Z


International Rectifier MOSFET
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AUD 1.6343

Multiples of: 1

91 A55 V5.8 mOhmsN - Channel     Smd/SmtTO - 252 - 3TubeSi      
IAUT260N10S5N019ATMA1


OptiMOS-5 Power Transistor MOSFET N-Channel 100V 260A 8-Pin PG-HSOF-1 T/R
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AUD 1.6343

Multiples of: 1

260 A100 V1.9 mOhmsN - Channel 2.2 V- 55 C+ 175 C300 WSmd/SmtHSOF - 8Cut TapeSi1 Channel10 V128 nCEnhancementAec - Q101 
SST80R500S


TO-252-3 MOSFETs ROHS
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AUD 1.6346

Multiples of: 1

                   
NTMFS5C612NT1G-TE


N-Channel 60V 35A (Ta), 230A (Tc) 3.8W (Ta), 170W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
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ON Semiconductor 0
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AUD 1.6354

Multiples of: 1

235 A60 V1.5 mOhmsN - Channel 1.2 V- 55 C+ 175 C3.8 WSMD/SMTSO - 8FL Si1 Channel- 20 V , + 20 V91 nCEnhancement  
AUIRF7484QTR


Infineon IR MOSFET Automotive MOSFET N 40V, 14A, 10mOhm
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AUD 1.6356

Multiples of: 1

14 A40 V10 mOhmsn - channel     smd/smtSO - 8Reelsi1 channel   aec - q101 
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