MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2SJ601-AZ


Trans MOSFET P-CH 60V 36A 3-Pin(3+Tab) TO-251
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Renesas 0
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AUD 1.6023
Multiples of: 1

36 A  p    1 Wthrough hole      enhancement  
SVF25NE50PN


TO-3P-3 MOSFETs ROHS
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Silan 0
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AUD 1.6024
Multiples of: 1

                   
STI18N65M2


STMicroelectronics MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 0
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AUD 1.6029
Multiples of: 1000

12 A650 V275 mOhmsn - channel 2 V + 150 C110 Wthrough holeI2PAK - 3Reelsi1 channel25 V20 nCenhancement mdmesh
IRFIB41N15DPBF


Transistor: N-MOSFET; unipolar; 150V; 41A; 200W; TO220FP
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
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AUD 1.603
Multiples of: 10

41 A150 V45 mOhmsN - Channel30 V - 55 C+ 175 C200 WThrough HoleTO - 220 - 3Tube   72 nCEnhancement  
CSD16321Q5C


N-Channel 25 V 31A (Ta), 100A (Tc) 3.1W (Ta) Surface Mount 8-VSON-CLIP (5x6)
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Texas Instruments 0
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AUD 1.6031
Multiples of: 1

31 A25 V2.6 mOhmsn - channel 1.1 V- 55 C+ 150 C3.1 Wsmd/smtVSON - CLIP - 8Reel  10 V14 nC  nexfet
IRFDC20PBF


N-Channel 600 V 320mA (Ta) 1W (Ta) Through Hole 4-HVMDIP
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Vishay 0
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AUD 1.604
Multiples of: 1

   N - Channel  - 55 C+ 150 C Through HoleHEXDIP - 4TubeSi      
NCEP85T16-VB


80V 195A 2.8m@10V 1PCSNChannel TO-220 MOSFETs ROHS
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VBsemi Elec 0
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AUD 1.6041
Multiples of: 1

                   
IPT059N15N3(TOKMAS)


150V 220A 4.5m@10V,50A 1PCSNChannel TOLL-8L MOSFETs ROHS
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Tokmas 0
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AUD 1.6046
Multiples of: 1

                   
FDD8444_F085


MOSFET LOW_VOLTAGE
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ON Semiconductor 0
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AUD 1.605
Multiples of: 1

   n - channel  - 55 C+ 175 C smd/smtTO - 252Reel       
FQP6N90C


Transistor: N-MOSFET; unipolar; 900V; 3.8A; 167W; TO220AB
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ON Semiconductor 0
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AUD 1.6054
Multiples of: 1

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