MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI4401BDY-T1-E3


MOSFET 40V 10.5A 0.014Ohm
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Vishay 0
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AUD 1.5436
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10.5 A 14 mOhmsP - Channel 1 V- 55 C+ 150 C2.9 WSmd/SmtSO - 8Cut TapeSi1 Channel10 V40 nCEnhancement Trenchfet
IRFB59N10D


100V 70A 18mO@10V,70A N Channel TO-220AB-3 MOSFETs ROHS
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VBsemi Elec 0
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AUD 1.544
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AUIRLR3915


MOSFET 55V, 61A, 14 mOhm Auto Lgc Lvl MOSFET
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Infineon 0
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AUD 1.544
Multiples of: 3000

61 A55 V12 mOhmsn - channel 3 V- 55 C+ 175 C120 Wsmd/smtDPAKTubesi1 channel16 V61 nCenhancementaec - q101 
Si4190BDY-T1-GE3


MOSFETs N-Channel 100 V (D-S) MOSFET PowerPAK SO-8, 14.9 mohm a. 10V 14.4 mohm a. 7.5V
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AUD 1.5445
Multiples of: 1

17 A100 V9.3 mOhmsN - Channel 2.5 V- 55 C+ 150 C8.4 WSMD/SMTSO - 8 Si1 Channel- 20 V , + 20 V62 nCEnhancement  
SISS30ADN-T1-GE3


MOSFET 80V N-CHANNEL D-S MOS
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Vishay 0
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AUD 1.5452
Multiples of: 1

           Cut Tape       
IPP80N04S3-03


MOSFET OPTIMOS-T PWR-TRANS N-CH 40V 80A 3.2
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Infineon 0
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AUD 1.5456
Multiples of: 1

80 A40 V3.5 mOhmsn - channel  - 55 C+ 175 C188 Wthrough holeTO - 220 - 3Tubesi1 channel20 V enhancement optimos
SUP70060E-GE3


MOSFET 100V Vds 20V Vgs TO-220
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Vishay 0
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AUD 1.5457
Multiples of: 1

131 A100 V4.8 mOhmsN - Channel 2 V- 55 C+ 175 C200 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V81 nCEnhancement Thunderfet
VBZM120N15


150V 20A 75mO@10V,20A N Channel TO-220AB-3 MOSFETs ROHS
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VBsemi Elec 0
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AUD 1.5459
Multiples of: 1

                   
MCAC80N045Y-TP


MOSFET N-Ch 45Vds 20Vgs 80A 160A 70W
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Micro Commercial Components (MCC) 0
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AUD 1.5459
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           Reel       
PSMN017-80BS,118


MOSFET, N-CH, 80V, 50A, TO-263
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Nexperia 0
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AUD 1.5465
Multiples of: 1

                   
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