MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFZ44ESPBF


MOSFET 60V 1 N-CH HEXFET 23mOhms 40nC
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
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AUD 1.4466

Multiples of: 1

48 A60 V23 mOhmsN - Channel  - 55 C+ 175 C110 WSmd/SmtD2PAKTubeSi1 Channel20 V40 nCEnhancement  
NVMFD5C470NLT1G


MOSFET T6 40V LL S08FL DS
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ON Semiconductor 0
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AUD 1.4474

Multiples of: 1

36 A40 V9.2 mOhms , 9.2 mOhmsN - Channel 1.2 V- 55 C+ 175 C24 WSmd/SmtDFN - 8Cut TapeSi2 Channel20 V9 nC , 9 nCEnhancementAec - Q101 
TPD65R360M


650V 11A 310mO@10V,5.5A 83W N Channel TO-252 MOSFETs ROHS
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UNIGROUP 0
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AUD 1.4479

Multiples of: 1

                   
SIR688DP-T1-GE3


MOSFET 60V Vds 20V Vgs PowerPAK SO-8
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Vishay 0
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AUD 1.4485

Multiples of: 3000

60 A60 V2.9 mOhmsN - Channel 1.3 V- 55 C+ 150 C83 WSmd/SmtPOWERPAK - SO - 8Cut TapeSi1 Channel20 V66 nCEnhancement Trenchfet, Powerpak
IRL3715ZPBF


MOSFET MOSFT 20V 50A 7nC 11mOhm Qg log lvl
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Infineon 0
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AUD 1.4486

Multiples of: 1

50 A20 V15.5 mOhmsn - channel20 V   45 Wthrough holeTO - 220 - 3Tube   7 nC   
SI4967DY-T1-E3


MOSFET 12V 7.5A 2W
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Vishay 0
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AUD 1.4486

Multiples of: 1

7.5 A- 12 V23 mOhmsp - channel8 V - 55 C+ 150 C2 Wsmd/smtSOIC - 8 NarrowReel    enhancement  
BUK752R3-40E,127


MOSFET BUK752R3-40E/SIL3P/STANDARD MA
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NXP 0
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AUD 1.4487

Multiples of: 1

120 A40 V1.95 mOhmsn - channel 2.4 V- 55 C+ 175 C293 Wthrough holeTO - 220 - 3Tubesi1 channel20 V109.2 nCenhancement  
HUFA76413DK8T-F085


MOSFET 60V Dual N-Channel Logic Level UltraFER
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ON Semiconductor 0
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AUD 1.4494

Multiples of: 2500

5.1 A60 V49 mOhmsN - Channel  - 55 C+ 150 C2.5 WSmd/SmtSO - 8ReelSi2 Channel     
IRF6722MTRPBF


Transistor: N-MOSFET; unipolar; 30V; 13A; 42W; DirectFET
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Infineon 0
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AUD 1.4494

Multiples of: 4800

            Hexfet®      
SI4966DY-T1-E3


MOSFET 20V 7.1A 2W
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 0
6 to 16 Weeks Calender.png

AUD 1.4496

Multiples of: 2500

7.1 A20 V25 mOhmsn - channel12 V - 55 C+ 150 C2 Wsmd/smtSOIC - 8 NarrowReel    enhancement  
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