MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
JMSH1507AE-13


SOT-263 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

JieJie 0
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AUD 1.4086
Multiples of: 1

                   
BUZ31 H3045A


N-Channel 200 V 14.5A (Tc) 95W (Tc) Surface Mount PG-TO263-3
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Infineon 0
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AUD 1.4089
Multiples of: 1000

14.5 A200 V200 mOhmsn - channel20 V - 55 C+ 150 C95 Wsmd/smtD2PAK - 2Reel      optimos
AUIRFN8401TR


International Rectifier MOSFET 40V Single N-Channel HEXFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
6 to 16 Weeks Calender.png

AUD 1.4092
Multiples of: 1

84 A40 V4.6 mOhmsn - channel 3 V- 55 C+ 175 C4.2 Wsmd/smtPQFN - 8Reelsi1 channel20 V44 nCenhancementaec - q101 
FDW262P


20V/8V, 45/63/100MO, PCH, TSSOP8, SINGLE
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ON Semiconductor 0
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AUD 1.4104
Multiples of: 1

                   
HY3410B


MOSFET N Trench 100V 140A (Tc) 4V @ 250uA 7.5 mΩ @ 70A,10V TO-263-2 RoHS
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HuaYi 0
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AUD 1.4104
Multiples of: 1

                   
PSMN8R5-100PSQ


MOSFET 100V N-CH STD LEVEL IN TO220
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Nexperia 0
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AUD 1.4107
Multiples of: 406

100 A100 V22.6 mOhmsN - Channel 4 V  263 WThrough HoleTO - 220 - 3TubeSi  111 nC   
AUIRFR3504ZTRL


Transistor: N-MOSFET; unipolar; 40V; 77A; 90W; DPAK
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Infineon 0
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AUD 1.4116
Multiples of: 3000

            Hexfet®      
KNB2408A


TO-263-3 MOSFETs ROHS
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KIA 0
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AUD 1.4119
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SQJ174EP-T1_GE3


MOSFETs PowerPAK SO-8L BWL
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Vishay 0
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AUD 1.4123
Multiples of: 1

293 A60 V2.9 mOhmsN - Channel 3.5 V- 55 C+ 175 C500 WSMD/SMTPOWERPAK SO - 8 Si1 Channel- 20 V , + 20 V54 nCEnhancement  
SQ4410EY-T1_GE3


MOSFET 30V 15A 5W AEC-Q101 Qualified
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 0
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AUD 1.4125
Multiples of: 1

15 A30 V12 mOhmsN - Channel 1.5 V- 55 C+ 175 C5 WSmd/SmtSOIC - 8ReelSi1 Channel20 V35 nCEnhancementAec - Q101Trenchfet
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