MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SIR500DP-T1-UE3


MOSFETs N-Channel 30 V (D-S) MOSFET 150 C 4.7 m 10V 6.8 m 4.5V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 0
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AUD 1.3775
Multiples of: 1

350.8 A30 V470 uOhmsN - Channel 2.2 V- 55 C+ 150 C104.1 WSMD/SMTSO - 8Reel , Cut TapeSi1 Channel- 12 V , + 16 V120 nCEnhancement  
IPN80R1K2P7


MOSFET LOW POWER_NEW
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Infineon 0
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AUD 1.3782
Multiples of: 1

                   
SIHP4N80E-GE3


MOSFET 800V Vds 30V Vgs TO-220AB
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 0
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AUD 1.3783
Multiples of: 1000

4.3 A800 V1.1 OhmsN - Channel 2 V- 55 C+ 150 C69 WThrough HoleTO - 220AB - 3 Si1 Channel10 V16 nCEnhancement  
SI9433BDY-E3


Transistor: P-MOSFET; unipolar; -20V; -5A; 2.5W; SO8
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Vishay 0
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AUD 1.3785
Multiples of: 1

                   
ZXMP4A16K


MOSFET, P, D-PAK
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Diodes Incorporated 0
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AUD 1.3787
Multiples of: 1

   P Channel               
SPD06N80C3BTMA1


MOSFET N-Ch 800V 6A DPAK-2 CoolMOS C3
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Infineon 0
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AUD 1.379
Multiples of: 2500

         smd/smtTO - 252 - 3Reel       
WMN12N80M3


Transistor: N-MOSFET; SJ-MOSFET M3; unipolar; 800V; 12A; 86W; TO262
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Wayon 0
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AUD 1.3791
Multiples of: 1

            Sj - Mosfet M3      
WMM12N80M3


Transistor: N-MOSFET; SJ-MOSFET M3; unipolar; 800V; 12A; 86W; TO263
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Wayon 0
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AUD 1.3791
Multiples of: 1

            Sj - Mosfet M3      
STU5N95K3


MOSFET POWER MOSFET N-CH 950V 4 A
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STMicroelectronics 0
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AUD 1.3791
Multiples of: 75

4 A950 V3 Ohmsn - channel30 V - 55 C+ 150 C90 Wthrough holeIPAK - 3Tubesi 30 V19 nC  supermesh
TSB15N10A


MOSFET N Trench 100V 150A (Tc) 4V @ 250uA 4.2 mΩ @ 50A,10V TO-263 RoHS
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UNIGROUP 0
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AUD 1.3792
Multiples of: 1

                   
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