MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI2300DS-T1-BE3


MOSFET N-CHANNEL 30-V (D-S)
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Vishay 0
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AUD 1.3713
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3.6 A30 V68 mOhmsN - Channel 1.5 V- 55 C+ 150 C1.7 WSMD/SMTSOT - 23 - 3Reel , Cut TapeSi1 Channel- 12 V , 12 V3 nCEnhancement  
SSM6J422TU,LXHF


MOSFET SMOS P-ch VDSS=-20V, VGSS=+6/-8V, ID=-4.
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Toshiba 0
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AUD 1.3713
Multiples of: 1

4 A20 V42.7 mOhmsP - Channel 1 V-+ 150 C1 WSMD/SMTUF6 - 6Reel , Cut TapeSi1 Channel- 8 V , + 6 V12.8 nCEnhancementAEC - Q101 
SSM6K810R,LXHF


MOSFET AUTO AEC-Q SS MOS N-ch Logic-Level Gate Drive VDSS:100V IC:3.5A PD:1.5W TSOP6F
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Toshiba 0
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AUD 1.3713
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3.5 A100 V51 mOhmsN - Channel 2.5 V + 175 C1.5 WSMD/SMTTSOP6FReel , Cut TapeSi1 Channel- 20 V , + 20 V3.2 nCEnhancementAEC - Q200 
SSM3J145TU,LXHF


MOSFET SMOS P-ch Vdss:-20V Vgss:-8/+6V Id:-3A U
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Toshiba 0
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AUD 1.3713
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3 A20 V103 mOhmsP - Channel 1 V-+ 150 C1 WSMD/SMTUFM - 3Reel , Cut TapeSi1 Channel- 8 V , + 6 V4.6 nCEnhancementAEC - Q101 
SSM3J374R,LXHF


MOSFET SMOS P-ch Vdss:-30V Vgss:-20/+10V Id:-4A
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Toshiba 0
6 to 16 Weeks Calender.png

AUD 1.3713
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4 A30 V71 mOhmsP - Channel 2 V-+ 150 C2 WSMD/SMTSOT - 23F - 3Reel , Cut TapeSi1 Channel- 20 V , + 10 V5.9 nCEnhancementAEC - Q101 
STH200N10WF7-2


MOSFET N-channel 100 V, 4.8 mOhm typ., 180 A STripFET F7 Power MOSFET
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STMicroelectronics 0
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AUD 1.3713
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180 A100 V4 mOhmsN - Channel 4.5 V- 55 C+ 175 C340 WSMD/SMT Reel , Cut TapeSi1 Channel- 20 V , 20 V93 nCEnhancement  
SSM3J356R,LXHF


MOSFET P Channel -60V -2A AECQ MOSFET
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Toshiba 0
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AUD 1.3713
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2 A60 V360 mOhmsP - Channel 2 V- 55 C+ 150 C2 WSMD/SMTSOT - 23F - 3Reel , Cut TapeSi1 Channel- 20 V , + 10 V8.3 nCEnhancementAEC - Q101 
SI3440ADV-T1-BE3


MOSFET N-CHANNEL 150-V (D-S)
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Vishay 0
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AUD 1.3713
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2.2 A150 V380 mOhmsN - Channel 4 V- 55 C+ 150 C3.6 WSMD/SMTTSOP - 6Reel , Cut TapeSi1 Channel- 20 V , + 20 V1.65 nCEnhancement  
FQA28N50F


MOSFETs 500V N-Channel FRFET
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ON Semiconductor 0
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AUD 1.3713
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IPD64CN10N G


MOSFETs N-Ch 100V 17A DPAK-2
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Infineon 0
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AUD 1.3713
Multiples of: 1

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