MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
R6004KNX


MOSFET Nch 600V 4A Si MOSFET
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AUD 1.3483

Multiples of: 1

4 A600 V900 mOhmsN - Channel 3 V- 55 C+ 150 C40 WThrough HoleTO - 220FP - 3BulkSi1 Channel20 V10.2 nCEnhancement  
AUIRFR5505


Transistor: P-MOSFET; unipolar; -55V; -18A; 57W; DPAK
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AUD 1.3486

Multiples of: 1

18 A55 V110 mOhmsP - Channel  - 55 C 57 WSmd/SmtDPAKTubeSi1 Channel20 V21.3 nCEnhancementAec - Q101 
BUK9629-100B,118


N-Channel 100 V 46A (Tc) 157W (Tc) Surface Mount D2PAK
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Nexperia 0
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AUD 1.3486

Multiples of: 1

46 A100 V27 mOhmsN - Channel  - 55 C+ 175 C157 WSmd/SmtSOT - 404ReelSi1 Channel15 V Enhancement  
SM7320ESQGC-TRG


MOSFET 2 个 N 沟道 30V 64A,85A 2.5V @ 250uA 7.5 mΩ @ 15A,4.5V;2.5 mΩ @ 15A,4.5V DFN5x6-8 RoHS
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Sinopower 0
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AUD 1.3487

Multiples of: 1

                   
IPU80R1K4P7


MOSFET LOW POWER_NEW
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AUD 1.3488

Multiples of: 1

                   
FQPF47P06YDTU


Fairchild Semiconductor MOSFET -60V -30A P-Channel
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ON Semiconductor 0
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AUD 1.3489

Multiples of: 19

30 A- 60 V26 mOhmsp - channel25 V - 55 C+ 175 C62 Wthrough holeTO - 220FP - 3Tubesi1 channel25 V enhancement  
VN2410L-G-P014


Microchip Technology MOSFET N-CH Enhancmnt Mode MOSFET
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AUD 1.3494

Multiples of: 2000

190 mA240 V10 OhmsN - Channel20 V - 55 C+ 150 C1 WThrough HoleTO - 92 - 3Bulk 1 Channel20 V Enhancement  
R6003KND3TL1


MOSFET 600V Vdss; 3A Id 44W Pd; TO-252
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AUD 1.3497

Multiples of: 2500

3 A600 V1.5 OhmsN - Channel 3.5 V- 55 C+ 150 C44 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V8 nCEnhancement  
NCE01P30K-VB


100V 33m@10V 1.92V 1PCSPChannel TO-252 MOSFETs ROHS
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AUD 1.3498

Multiples of: 1

                   
IRF540ZLPBF


N-Channel 100 V 36A (Tc) 92W (Tc) Through Hole TO-262
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AUD 1.35

Multiples of: 1

36 A100 V26.5 mOhmsN - Channel  - 55 C+ 175 C92 WThrough HoleTO - 262TubeSi1 Channel20 V42 nCEnhancement  
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