MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FQP9N50


MOSFET 500V N-Channel QFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 0
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AUD 1.3278

Multiples of: 50

           -       
STB6N62K3


MOSFET N-Channel Power Mosfet D2PAK
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STMicroelectronics 0
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AUD 1.3278

Multiples of: 1

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HM50P06K-VB


60V 50A 20m@10V 1PCSPChannel TO-252 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

VBsemi Elec 0
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AUD 1.3282

Multiples of: 1

                   
SI4936BDY-T1-E3


MOSFET 30 Volt 6.9 Amp 2.8W
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Vishay 0
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AUD 1.3282

Multiples of: 1

6.9 A30 V35 mOhmsN - Channel 1.5 V- 55 C+ 150 C2.8 WSmd/SmtSO - 8ReelSi2 Channel10 V9.1 nCEnhancement Trenchfet
NVD5C464NT4G


MOSFET T6 40V SL DPAK
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ON Semiconductor 0
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AUD 1.3284

Multiples of: 1

59 A40 V4.8 mOhmsN - Channel 2 V- 55 C+ 175 C40 WSmd/SmtDPAK - 4Cut TapeSi1 Channel20 V20 nCEnhancementAec - Q101 
NVTFS003N04CTAG


Transistor MOSFET N-CH 40V 103A 8-Pin WDFN Surface Mount T/R
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ON Semiconductor 0
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AUD 1.3291

Multiples of: 1500

103 A40 V3.5 mOhmsN - Channel 2.5 V- 55 C+ 175 C69 WSMD/SMTWDFN - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V23 nCEnhancementAEC - Q101 
DMNH6008SPSQ-13


MOSFET MOSFET BVDSS: 41V-60V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 0
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AUD 1.3291

Multiples of: 2500

         Smd/SmtPowerdi5060 - 8Cut TapeSi    Aec - Q101 
TMA20N65H


MOSFET TO-220F RoHS
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UNIGROUP 0
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AUD 1.3294

Multiples of: 1

                   
TK12A60W,S4VX


Toshiba MOSFET N-Ch 600V 11.5A 35W DTMOSIV 890pF 25nC
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Toshiba 0
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AUD 1.3296

Multiples of: 1

11.5 A600 V265 mOhmsN - Channel 2.7 v to 3.7 V + 150 C35 WThrough HoleTO - 220 - 3ReelSi1 Channel30 V25 nCEnhancement Dtmosiv
NVMFD5C470NLWFT1G


MOSFET T6 40V LL S08FL DS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 0
6 to 16 Weeks Calender.png

AUD 1.3296

Multiples of: 1500

36 A40 V9.2 mOhms , 9.2 mOhmsN - Channel 1.2 V- 55 C+ 175 C24 WSmd/SmtDFN - 8Cut TapeSi2 Channel20 V9 nC , 9 nCEnhancementAec - Q101 
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