MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SIR624DP-T1-RE3


MOSFET 200V Vds 20V Vgs PowerPAK SO-8
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 0
6 to 16 Weeks Calender.png

AUD 1.3125
Multiples of: 1

   N Channel               
SUM70090E-GE3


MOSFET 100V Vds 50A Id 0.0089Vgs Rds(On)
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 0
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AUD 1.3131
Multiples of: 1

50 A100 V7.4 mOhmsn - channel 2 V- 55 C+ 175 C125 Wsmd/smtTO - 263 - 3Reelsi1 channel+/- 20 V50 nCenhancement thunderfet
BUK7E3R1-40E,127


MOSFET N-channel TrenchMOS standard level FET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Nexperia 0
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AUD 1.3131
Multiples of: 1

100 A40 V2.6 mOhmsn - channel 3 V- 55 C+ 175 C234 Wsmd/smtTO - 262 - 3Tubesi1 channel20 V79 nCenhancement  
FQI8N60CTU


MOSFET 600V N-Channel Adv Q-FET C-Series
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 0
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AUD 1.3134
Multiples of: 1

7.5 A600 V1.2 Ohmsn - channel  - 55 C+ 150 C3.13 Wsmd/smtTO - 263Tubesi1 channel30 V enhancement  
NTE490


Transistor: N-MOSFET; 60V; TO92
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NTE 0
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AUD 1.3134
Multiples of: 1

                   
AOT2606L


Transistor: N-MOSFET; unipolar; 60V; 56A; 57.5W; TO220
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Alpha & Omega 0
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AUD 1.3138
Multiples of: 1

                   
AOTF2606L


Transistor: N-MOSFET; unipolar; 60V; 38A; 18W; TO220F
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Alpha & Omega 0
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AUD 1.3138
Multiples of: 1

                   
PHB66NQ03LT.118


Transistor: N-MOSFET; unipolar; 25V; 45A; 93W; D2PAK
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Nexperia 0
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AUD 1.3138
Multiples of: 1

                   
AP09N70I-A


MOSFET N Trench 650V 9A 4V @ 250uA 750 mΩ @ 4.5A,10V TO-220F (TO-220IS) RoHS
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APEC 0
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AUD 1.314
Multiples of: 1

                   
IRFB33N15DPBF


International Rectifier MOSFET 150V 1 N-CH HEXFET 56mOhms 60nC
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Infineon 0
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AUD 1.3141
Multiples of: 25

33 A150 V56 mOhmsN - Channel30 V5.5 V- 55 C+ 175 C3.8 WThrough HoleTO - 220 - 3TubeSi1 Channel30 V60 nCEnhancement  
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