MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFS7437PBF


International Rectifier MOSFET 40V, 195A, 1.8 mOhm 150 nC Qg, D2-Pak
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Infineon 0
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AUD 1.3033
Multiples of: 1

195 A40 V1.8 mOhmsn - channel 2.2 v to 3.9 V- 55 C+ 175 C230 Wsmd/smtD - PAK - 3Tubesi1 channel20 V150 nCenhancement strongirfet
NVMFS6B14NLT1G


MOSFET T5 100V LL S08FL
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ON Semiconductor 0
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AUD 1.3034
Multiples of: 1

55 A100 V19 mOhmsn - channel 1 V- 55 C+ 175 C94 Wsmd/smtSOIC - 8Reelsi1 channel+/- 16 V17 nCenhancementaec - q101 
IRFZ24NSTRLPBF


N-Channel 55 V 17A (Tc) 3.8W (Ta), 45W (Tc) Surface Mount D2PAK
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
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AUD 1.3036
Multiples of: 800

17 A55 V70 mOhmsN - Channel20 V4 V- 55 C+ 175 C3.8 WSmd/SmtD - PAK - 3Reel   20 nC   
SISH106DN-T1-GE3


MOSFET 20V Vds; +/-12V Vgs PowerPAK 1212-8SH
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Vishay 0
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AUD 1.3038
Multiples of: 1

19.5 A20 V6.2 mOhmsN - Channel 600 mV- 55 C+ 150 C3.8 WSMD/SMTPOWERPAK - 1212 - 8SReel , Cut TapeSi1 Channel- 12 V , 12 V27 nCEnhancement TrenchFET, PowerPAK
TN0106N3-G-P013


Microchip Technology MOSFET N-CH Enhancmnt Mode MOSFET
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Microchip 0
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AUD 1.3039
Multiples of: 2000

350 mA60 V4.5 OhmsN - Channel  - 55 C+ 150 C1 WThrough HoleTO - 92 - 3Reel 1 Channel20 V Enhancement  
FQD5P10TM


MOSFET 100V P-Channel QFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 0
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AUD 1.3043
Multiples of: 1

3.6 A100 V1.05 OhmsP - Channel  - 55 C+ 150 C2.5 WSmd/SmtTO - 252ReelSi1 Channel30 V Enhancement  
PH2520U,115


MOSFET, N-CH, 20V, 100A, LFPAK56
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Nexperia 0
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AUD 1.3046
Multiples of: 1

                   
IPG20N04S4-09


MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2
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Infineon 0
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AUD 1.3046
Multiples of: 1

20 A40 V7.9 mOhms , 7.9 mOhmsn - channel 2 V- 55 C+ 175 C54 Wsmd/smtTDSON - 8Reelsi2 channel20 V28 nC , 28 nCenhancementaec - q101optimos
FDPF9N50NZ


Fairchild Semiconductor MOSFET N-CH UNIFET2 SINGLE GAGE 500V
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ON Semiconductor 0
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AUD 1.3049
Multiples of: 1

 500 V n - channel       Tubesi1 channel     
NVMFS5C466NWFT1G


MOSFET 40V 7.3 MOHM T6 S08FL SIN
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ON Semiconductor 0
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AUD 1.3052
Multiples of: 1

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