MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTMFS3D0N08XT1G


MOSFETs MOSFET - Power, Single, N-Channel, STD Gate. SO8FL-HEFET, 80V, 2.6mohm, 154 A MOSFET - Power, Single, N-Channel, STD Gate. SO8FL-HEFET, 80V, 2.6mohm, 154 A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 0
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AUD 1.2854

Multiples of: 1

154 A80 V2.6 mOhmsN - Channel 3.6 V- 55 C+ 175 C133 WSMD/SMTSO - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V28 nCEnhancement  
P120NF10


100V 18A 121mΩ@10V,20A 105W 4V@250uA 110pF@25V N Channel 930pF@25V 28nC@10V -55℃~+175℃@(Tj) TO-220AB MOSFETs ROHS
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VBsemi Elec 0
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AUD 1.2856

Multiples of: 1

                   
BRU20N50


MOSFET N Trench 500V 20A (Tc) 5V @ 250uA 260 mΩ @ 10A,10V TO-3P RoHS
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Blue Rocket 0
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AUD 1.286

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STL10N65M2


STMicroelectronics MOSFET
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STMicroelectronics 0
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AUD 1.2864

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 650 V n - channel  - 55 C+ 150 C smd/smtPowerflat 5X6 HV - 8Reelsi1 channel25 V   mdmesh
SISF20DN-T1-GE3


MOSFET Nch 60V Vds 20V Vgs PowerPAK 1212-8SCD
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Vishay 0
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AUD 1.2865

Multiples of: 1

20 A60 V13 OhmsN - Channel 3 V- 55 C+ 150 C Smd/SmtPOWERPAK 1212 - 8SCDCut TapeSi2 Channel20 V22 nCEnhancement  
IPL65R650C6SATMA1


Transistor: N-MOSFET; unipolar; 650V; 6.7A; 56.8W; PG-VSON-4
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Infineon 0
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AUD 1.2869

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            Coolmos      
TK7P65W,RQ


N-Channel 650 V 6.8A (Ta) 60W (Tc) Surface Mount DPAK
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Toshiba 0
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AUD 1.2871

Multiples of: 2000

6.8 A650 V660 mOhmsN - Channel 2.5 V- 55 C+ 150 C60 WSmd/SmtTO - 252 - 3ReelSi1 Channel30 V15 nCEnhancement  
IPD50R399CPBTMA1


Transistor: N-MOSFET; unipolar; 500V; 9A; 83W; PG-TO252-3
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Infineon 0
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AUD 1.2873

Multiples of: 463

            coolmos      
IPP80N06S2L07AKSA1


MOSFET N-CHANNEL_55/60V
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Infineon 0
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AUD 1.2875

Multiples of: 1

   N Channel       Tube       
NTTFS020N06CTAG


MOSFET T6 60V SG HIGHER RDS-ON PORTFOLIO
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ON Semiconductor 0
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AUD 1.2885

Multiples of: 1

                   
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