MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPD70N04S307ATMA1


Trans MOSFET N-CH 40V 82A 3-Pin(2+Tab) TO-252
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
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AUD 1.2503
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           Tape And Reel    enhancement  
CMS100N03H8-HF


N-Channel 30V 100A (Tc) 3.6W (Ta), 83W (Tc) Surface Mount DFN5x6 (PR-PAK)
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Comchip 0
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AUD 1.2505
Multiples of: 3000

          8 - PowertdfnTape And ReelMosfet (Metal Oxide)      
IPB80P04P4L-04


Infineon Technologies MOSFET P-Ch -40V -80A D2PAK-2 OptiMOS-P2
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Infineon 0
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AUD 1.2509
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- 80 A- 40 V4.4 mOhmsp - channel  - 55 C+ 175 C125 Wsmd/smtD2PAK - 3Reelsi1 channel16 V135 nC aec - q101optimos
SIHU7N60E-GE3


MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
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Vishay 0
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AUD 1.2509
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7 A609 V600 mOhmsn - channel 4 V- 55 C+ 150 C78 Wthrough holeIPAK (TO - 251)Tubesi1 channel30 V20 nCenhancement  
PHB47NQ10T,118


Transistor: N-MOSFET; unipolar; 100V; 33A; Idm: 187A; 166W; D2PAK
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Nexperia 0
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AUD 1.2509
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47 A100 V28 mOhmsN - Channel20 V - 55 C+ 175 C166 WSmd/SmtSOT - 404 - 3Reel    Enhancement  
NCE80H11D-VB


80V 6m@10V 3.7V 1PCSNChannel TO-263 MOSFETs ROHS
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VBsemi Elec 0
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AUD 1.251
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STD5NM50AG


MOSFET PTD HIGH VOLTAGE
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STMicroelectronics 0
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AUD 1.2515
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           Cut Tape       
VBMB1606


MOSFET N Channel 60V 100A 3V @ 250uA 5mO @ 100A,10V TO220F RoHS
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VBsemi Elec 0
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AUD 1.2515
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SIR800DP-T1-GE3


MOSFET 20V 50A N-CH MOSFET
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Vishay 0
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AUD 1.2518
Multiples of: 3000

   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK SO - 8ReelSi     Trenchfet, Powerpak
SLF65R300S2


650V 15A 260mO@10V,7.5A 35.7W N Channel TO-220F-3 MOSFETs ROHS
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Maplesemi 0
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AUD 1.2519
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