MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SQD100N02-3M5L_GE3


MOSFET N Ch 20Vds 20Vgs AEC-Q101 Qualified
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 0
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AUD 1.1558

Multiples of: 1

100 A20 V2 mOhmsN - Channel 1.5 V- 55 C+ 175 C83 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V110 nCEnhancementAec - Q101Trenchfet
IRF3709PBF


International Rectifier MOSFET 30V 1 N-CH HEXFET 9mOhms 27nC
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Infineon 0
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AUD 1.1558

Multiples of: 1

90 A30 V10.5 mOhmsN - Channel20 V3 V- 55 C+ 150 C120 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V27 nCEnhancement  
DMT10H017LPD-13


MOSFET MOSFET BVDSS: 61V~100V PowerDI5060-8 T&R 2.5K
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 0
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AUD 1.1558

Multiples of: 2500

         Smd/SmtPowerdi5060 - 8Cut TapeSi      
SI4922BDY-T1-E3


Mosfet Array 2 N-Channel (Dual) 30V 8A 3.1W Surface Mount 8-SOIC
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Vishay 0
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AUD 1.1559

Multiples of: 1

   Dual N Channel      SOIC - 8 NarrowReel       
SIZ914DT-T1-GE3


Vishay Semiconductors MOSFET 30V 1640A 23100W TrenchFET
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Vishay 0
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AUD 1.1562

Multiples of: 3

16 A , 40 A30 v , 30 V6.4 mOhms , 1.37 mOhmsn - channel 1.2 v , 1 V- 55 C+ 150 C22.7 w , 100 Wsmd/smtWDFN - 8Reel-2 channel- 16 v , + 20 V17 nC , 66 nCenhancement trenchfet
SPC20N65G


TO-220F-3 MOSFETs ROHS
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Sinai Power 0
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AUD 1.1568

Multiples of: 1

                   
STD70NS04ZL


MOSFET N-Ch Clamped 9.5 ohm 70 A DPAK SAFeFET
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STMicroelectronics 0
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AUD 1.1573

Multiples of: 2500

70 A33 V9.5 mOhmsn - channel 3 V  110 Wsmd/smtDPAKReelsi1 channel20 V32 nC aec - q101safefet
RU75150R


MOSFET N Trench 75V 148A 4V @ 250uA 6.5 mΩ @ 75A,10V TO-220 (TO-220-3) RoHS
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Ruichips 0
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AUD 1.1573

Multiples of: 1

                   
CSD18537NQ5AT


N-Channel 60 V 50A (Tc) 3.2W (Ta), 75W (Tc) Surface Mount 8-VSONP (5x6)
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Texas Instruments 0
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AUD 1.1575

Multiples of: 250

50 A60 V13 mOhmsN - Channel 2.6 V- 55 C+ 150 C75 WSmd/SmtVSONP - 8Cut TapeSi1 Channel10 V14 nCEnhancement Nexfet
RU1HP60R


MOSFET P Trench 100V 60A 4V @ 250uA 25 mO @ 60A,10V TO-220 (TO-220-3) RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Ruichips 0
6 to 16 Weeks Calender.png

AUD 1.1576

Multiples of: 1

                   
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