MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
PTA20N65A


MOSFET TO-220F RoHS
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PIP 0
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AUD 1.0783

Multiples of: 1

                   
SLD65R420S2


MOSFET TO-252 RoHS
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Maplesemi 0
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AUD 1.0783

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PSMN5R6-60YL


MOSFET, N-CH, 60V, 100A, SOT-669-4
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Nexperia 0
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AUD 1.0784

Multiples of: 1

   N Channel               
ATP114-TL-H


ON Semiconductor MOSFET SWITCHING MOSFET
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ON Semiconductor 0
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AUD 1.0784

Multiples of: 3000

55 A- 60 V16 mOhmsp - channel  - 55 C+ 150 C60 Wsmd/smtDPAK - 3Reelsi1 channel20 V92 nCenhancement  
IPD65R950CFD


Infineon Technologies MOSFET N-Ch 700V 3.9A DPAK-2
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Infineon 0
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AUD 1.0784

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3.9 A650 V855 mOhmsn - channel 3.5 V- 55 C+ 150 C36.7 Wsmd/smtTO - 252 - 3Reelsi1 channel20 V14.1 nCenhancement  
FDMS86105-VB


100V 65A 8.7m@10V 1PCSNChannel DFN-8L(5x6) MOSFETs ROHS
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VBsemi Elec 0
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AUD 1.0785

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SIJA22DP-T1-GE3


MOSFET 25V N-CHANNEL D-S
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Vishay 0
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AUD 1.0787

Multiples of: 1

201 A25 V740 uOhmsN - Channel 2.2 V- 55 C+ 150 C48 WSMD/SMTPOWERPAK SO - 8Trenchfet , Cut Tape , Reel , ReelSi1 Channel- 16 V , + 20 V83 nCEnhancement TrenchFET
TPCA8045-H(T2L1,VM


MOSFET N-CH 40V 46A 8-SOP ADV
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Toshiba 0
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AUD 1.0788

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46 A40 V3.6 mOhmsN - Channel 1.3 V- 55 C+ 150 C45 WSMD/SMTSOP - 8U - MOSVI - H , Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V90 nCEnhancement U - MOSVI - H
IRFD9210PBF


P-Channel 200 V 400mA (Ta) 1W (Ta) Through Hole 4-HVMDIP
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Vishay 0
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AUD 1.0794

Multiples of: 1

   P - Channel  - 55 C+ 150 C Through HoleHEXDIP - 4TubeSi      
CS12N65FA9H


MOSFET N Trench 650V 12A (Tc) 4V @ 250uA 700 mO @ 6A,10V TO-220F (TO-220IS) RoHS
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Huajing 0
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AUD 1.0796

Multiples of: 1

                   
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