MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPLK70R1K4P7ATMA1


MOSFET LOW POWER_NEW
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 13
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AUD 1.0686
Multiples of: 1

                   
SI8413DB-T1-E1


MOSFET 20V 6.5A 2.77W 48mohm @ 4.5V
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Vishay 0
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AUD 1.0697
Multiples of: 1

   P - Channel  - 55 C+ 150 C Smd/SmtMICRO - FOOT - 4ReelSi     Trenchfet
IPP80N06S2L-07


MOSFET OptiMOS PWR TRANS 55V 80A
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Infineon 0
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AUD 1.0699
Multiples of: 1

80 A55 V7 mOhmsn - channel  - 55 C+ 175 C210 Wthrough holeTO - 220 - 3Tubesi1 channel20 V enhancement  
STL16N65M2


STMicroelectronics MOSFET
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STMicroelectronics 0
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AUD 1.07
Multiples of: 3000

7.5 A650 V395 mOhmsn - channel25 V3 V- 55 C+ 150 C56 Wsmd/smtPowerflat - 8Reelsi1 channel25 V19.5 nCenhancement mdmesh
NTMFS4934NT1G


N-Channel 30 V 17.1A (Ta), 147A (Tc) 930mW (Ta), 69.44W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
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ON Semiconductor 0
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AUD 1.07
Multiples of: 1500

47.5 A30 V3 mOhmsn - channel 2.2 V  2.72 Wsmd/smtSO - 8 FLATReelsi1 channel 34 nC   
FDMS5360L_F085


MOSFET N-Channel Power Trench MOSFET
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ON Semiconductor 0
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AUD 1.07
Multiples of: 3000

60 A60 V8.7 mOhmsn - channel20 V1.9 V- 55 C+ 175 C150 Wsmd/smtPOWER33 - 3Reelsi1 channel20 V64 nC  powertrench
IRFH5207TRPBF


International Rectifier MOSFET 75V 1 N-CH HEXFET 9.6mOhms 39nC
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Infineon 0
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AUD 1.0703
Multiples of: 1

71 A75 V9.6 mOhmsN - Channel20 V4 V- 55 C+ 150 C3.6 WSmd/SmtPQFN - 8ReelSi1 Channel20 V40 nCEnhancement  
SPD04N50C3ATMA1


MOSFET LOW POWER_LEGACY
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Infineon 0
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AUD 1.0704
Multiples of: 2500

 500 V       Smd/SmtTO - 252 - 3Cut TapeSi     Coolmos
TK5A90E,S4X


MOSFET PWR MOSFET PD=40W F=1MHZ
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Toshiba 0
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AUD 1.0246
Multiples of: 1

4.5 A900 V3.1 OhmsN - Channel 2.5 V- 55 C+ 150 C40 WThrough HoleTO - 220SIS - 3TubeSi1 Channel10 V20 nCEnhancement Mosvii
TK7R4A10PL,S4X


MOSFET TO-220SIS PD=42W 1MHz PWR MOSFET TRNS
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Toshiba 0
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AUD 1.0714
Multiples of: 1

50 A100 V11.2 mOhmsN - Channel 2.5 V- 55 C+ 175 C42 WThrough HoleTO - 220SIS - 3TubeSi1 Channel20 V44 nCEnhancement U - Mosix - H
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