MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDD120AN15A0_F085


MOSFET 14A 150V MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 0
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AUD 1.0603
Multiples of: 1

14 A150 V90.5 mOhmsN - Channel20 V3 V- 55 C+ 175 C65 WSmd/SmtDPAK - 2ReelSi1 Channel20 V11.3 nC   
WMB018N04LG2


Transistor: N-MOSFET; unipolar; PDFN5060-8
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Wayon 0
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AUD 1.0603
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NTTFS030N06CTAG


MOSFET Single N-Channel Power MOSFET 60V 27A 29.7m?O in u8FL
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ON Semiconductor 0
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AUD 1.0605
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19 A60 V29.7 mOhmsN - Channel 4 V- 55 C+ 175 C23 WSMD/SMTWDFN - 8Cut Tape , ReelSi1 Channel- 20 V , + 20 V4.7 nCEnhancement  
PSMN2R8-25MLC


MOSFET, N-CH, 25V, 70A, LFPAK33
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Nexperia 0
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AUD 1.0605
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   N Channel               
BUK9523-75A,127


MOSFET RAIL PWR-MOS
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NXP 0
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AUD 1.0606
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53 A75 V22 mOhmsn - channel  - 55 C+ 175 C138 Wthrough holeTO - 220 - 3Tubesi1 channel10 V enhancement  
BSB104N08NP3GXUSA1


Transistor: N-MOSFET; unipolar; 80V; 32A; 48W
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Infineon 0
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AUD 1.0607
Multiples of: 1

            Optimos      
TK2P90E,RQ


MOSFET PWR MOSFET PD=80 F=1MHZ
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Toshiba 0
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AUD 1.0611
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2 A900 V5.9 OhmsN - Channel 2.5 V- 55 C+ 150 C80 WSmd/SmtDPAK - 3Cut TapeSi1 Channel10 V12 nCEnhancement Mosviii
FDS8984_F085


MOSFET NCH PWR TRNCH MOSFET
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ON Semiconductor 0
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AUD 1.0611
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7 A30 V19 mOhmsn - channel   + 150 C1.6 Wsmd/smtSOIC - 8Reelsi2 channel20 V   powertrench
CSD16322Q5C


N-Channel 25 V 21A (Ta), 97A (Tc) 3.1W (Ta) Surface Mount 8-SON
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Texas Instruments 0
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AUD 1.0611
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100 A25 V5.8 mOhmsn - channel 1.1 V- 55 C+ 150 C3.1 Wsmd/smtSON - 8Reelsi1 channel10 V6.8 nC  nexfet
IRF9Z24N


IRF9Z24N HEXFET
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Infineon 0
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AUD 1.0612
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- 12 A- 55 V175 mOhmsP - Channel20 V- 4 V- 55 C+ 175 C45 WThrough HoleTO - 220 - 3Tube   12.7 nC   
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