MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SIS108DN-T1-GE3


MOSFET Nch 80V Vds 20V Vgs PowerPAK 1212-8
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 0
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AUD 1.0518
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16 A80 V34 mOhmsN - Channel 2 V- 55 C+ 150 C24 WSmd/SmtPowerpak1212 - 8Cut TapeSi1 Channel20 V13 nCEnhancement Trenchfet, Powerpak
SQJ260EP-T1_GE3


MOSFET Dual 60V Vds Asymtrc AEC-Q101 Qualified
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 0
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AUD 1.0525
Multiples of: 1

20 A , 54 A60 V15.5 mOhms , 7 mOhmsN - Channel 1.5 V- 55 C+ 175 C27 w , 48 WSmd/SmtPOWERPAK - SO - 8L - 4Cut TapeSi2 Channel10 V12 nC , 25 nCEnhancementAec - Q101Trenchfet
IPAN60R280P7SXKSA1


MOSFET CONSUMER
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Infineon 0
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AUD 1.0527
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           TubeSi      
NVMD6N04R2G


ON Semiconductor MOSFET NFET SO8 40V
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ON Semiconductor 0
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AUD 1.0529
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5.8 A40 V34 mOhmsn - channel     smd/smtSOIC - 8Reelsi2 channel   aec - q101 
IRF1010ZPBF-VB


60V 120A 5m@10V,20A 136W 2V@250uA TO-220AB MOSFETs ROHS
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VBsemi Elec 0
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AUD 1.053
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IXTP130N10T-VB


100V 100A 250W 0.009@10V,30A 4V@250uA TO-220AB MOSFETs ROHS
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VBsemi Elec 0
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AUD 1.053
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IRF7855PBF


MOSFET N Trench 60V 12A 4.9V @ 100uA 9.4 mΩ @ 12A,10V SOIC-8_150mil RoHS
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Infineon 0
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AUD 1.0531
Multiples of: 15

12 A60 V9.4 mOhmsN - Channel    2.5 WSmd/SmtSOIC - 8TubeSi1 Channel20 V26 nC   
TPCP8206,LF(CM


TPCP8206,LF(CM
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Toshiba 0
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AUD 1.0537
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PMC85XP


MOSFET, P-CH, 30V, SOT1118
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Nexperia 0
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AUD 1.0538
Multiples of: 1

   P Channel               
SQJ202EP-T1_GE3


MOSFET Dual N Ch 12V Vds AEC-Q101 Qualified
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Vishay 0
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AUD 1.0545
Multiples of: 1

20 A , 60 A12 v , 12 V9.3 mOhms , 4.5 mOhmsN - Channel 1 v , 1 V- 55 C+ 175 C27 w , 48 WSmd/SmtPOWERPAK - DUAL - 8ReelSi2 Channel+/- 20 v , +/- 20 V14.5 nC , 35.9 nCEnhancementAec - Q101Trenchfet
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