MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFR8314TRPBF


MOSFET N Trench 30V 90A 2.2V @ 100uA 2.2 mΩ @ 90A,10V TO-252-2 (DPAK) RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
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AUD 1.0435
Multiples of: 2000

179 A30 V2.2 mOhmsN - Channel 1.7 V- 55 C+ 175 C125 WSmd/SmtD - PAK - 3ReelSi1 Channel20 V36 nC   
TK5A65W,S5X


MOSFET Power MOSFET N-Channel
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba 0
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AUD 0.9988
Multiples of: 1

5.2 A650 V1 OhmsN - Channel 2.5 V- 55 C+ 150 C30 WThrough HoleTO - 220 - 3TubeSi1 Channel30 V10.5 nCEnhancement  
NVTFS014P04M8LTAG


MOSFET MV8 P INITIAL PROGRAM
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 0
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AUD 1.0436
Multiples of: 1

           Cut Tape       
MCU80N06-TP


MOSFET N-Ch Enh FET 40Vds 60A 20Vgs 1.25W
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Micro Commercial Components (MCC) 0
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AUD 1.0442
Multiples of: 2500

80 A60 V12 mOhmsN - Channel 0.9 V- 55 C+ 175 C85 WSmd/SmtDPAK - 3Cut TapeSi1 Channel10 V45 nCEnhancement  
SUD50N03-09P-E3


MOSFET 30V 63A 65.2W
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Vishay 0
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AUD 1.0443
Multiples of: 1

   n - channel  - 55 C+ 175 C smd/smtTO - 252 - 3Reelsi     trenchfet
STD1NB80T4-VB


800V 2.8A 2380m@10V 1PCSNChannel TO-251 MOSFETs ROHS
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VBsemi Elec 0
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AUD 1.0443
Multiples of: 1

                   
IXTY3N60P


IXYS MOSFET 3 Amps 600V 3 Rds
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IXYS 0
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AUD 1.0446
Multiples of: 1

3 A600 V2.9 Ohmsn - channel 5.5 V- 55 C+ 150 C70 Wsmd/smtDPAK - 3Tubesi1 channel30 V9.8 nCenhancement polarhv
TPH3R506PL,LQ(S


MOSFET N Trench 60V 94A (Tc) 2.5V @ 500uA 3.5 mO @ 47A,10V SOP-8 RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba 0
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AUD 1.0447
Multiples of: 1

                   
IRF9610


MOSFET P-Chan 200V 1.8 Amp
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Samsung 0
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AUD 1.0448
Multiples of: 1

1.8 A- 200 V3 OhmsP - Channel20 V - 55 C+ 150 C20 WThrough HoleTO - 220 - 3Tube    Enhancement  
RJK6012DPP-VB


TO-220F MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

VBsemi Elec 0
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AUD 1.0449
Multiples of: 1

                   
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